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TC58NYG0S3HBAI6

Categorystorage    The FLASH memory   
File Size484KB,52 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC58NYG0S3HBAI6
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M
8 BIT) CMOS NAND E
2
PROM
DESCRIPTION
The TC58NYG0S3HBAI6 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E
2
PROM) organized as (2048
128) bytes
64 pages
1024 blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block
unit (128 Kbytes
8 Kbytes: 2176 bytes
64 pages).
The TC58NYG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed, making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
2176
64K
8
2176
8
2176 bytes
(128K
8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
Mode control
Serial input/output
Command control
Number of valid blocks
Min 1004 blocks
Max 1024 blocks
Power supply
V
CC
½
1.7V to 1.95V
Access time
Cell array to register
Read Cycle Time
Program/Erase time
Auto Page Program
Auto Block Erase
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
25
s
max
25 ns min (C
L
=30pF)
300
s/page
typ.
3.5 ms/block typ.
30 mA max
30 mA max
30 mA max
50
A
max
(Weight: 0.095 g typ.)
Package
P-VFBGA67-0608-0.80-001
8 bit ECC for each 512Byte is required.
© 2012-2019 KIOXIA Corporation
1
2019-10-01C
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