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FCMT250N65S3

Among 1 related components, FCMT250N65S3 have related pdf.
Part Number Manufacturer Description Datasheet
FCMT250N65S3 ON Semiconductor SUPERFET3 650V PQFN88 Download
FCMT250N65S3 parameters:

Description

SUPERFET3 650V PQFN88

Parametric
Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)650V
Current - Continuous Drain (Id) at 25°C12A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs250 milliohms @ 6A, 10V
Vgs (th) (maximum value) when different Id4.5V @ 1.2mA
Gate charge (Qg) at different Vgs (maximum value)24nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)1010pF @ 400V
FET function-
Power dissipation (maximum)90W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPower88
Package/casing4-PowerTSFN

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