| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) at 25°C | 12A(Tc) |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 250 milliohms @ 6A, 10V |
| Vgs (th) (maximum value) when different Id | 4.5V @ 1.2mA |
| Gate charge (Qg) at different Vgs (maximum value) | 24nC @ 10V |
| Vgs (maximum value) | ±30V |
| Input capacitance (Ciss) at different Vds (maximum value) | 1010pF @ 400V |
| FET function | - |
| Power dissipation (maximum) | 90W(Tc) |
| Operating temperature | -55°C ~ 150°C(TJ) |
| Installation type | surface mount |
| Supplier device packaging | Power88 |
| Package/casing | 4-PowerTSFN |