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MTB30P06V

Showing 9 Results for MTB30P06V, including MTB30P06V,MTB30P06V, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
MTB30P06V Motorola ( NXP ) TMOS POWER FET 30 AMPERES 60 VOLTS Download
MTB30P06V Rochester Electronics 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 Download
MTB30P06V ON Semiconductor 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET Download
MTB30P06VG ON Semiconductor 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET Download
MTB30P06VT4 ON Semiconductor MOSFET 60V 30A P-Channel Download
MTB30P06VT4 Rochester Electronics 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 Download
MTB30P06VT4 Motorola ( NXP ) 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET Download
MTB30P06VT4G VBsemi Electronics Co. Ltd. P-Channel 60 V (D-S) MOSFET Download
MTB30P06VT4G ON Semiconductor MOSFET PFET D2PAK 60V 30A 80mOhm Download
MTB30P06V Related Product Datasheets:
Part Number Datasheet
MTB30P06V 、 MTB30P06VT4 Download Datasheet
MTB30P06V 、 MTB30P06VG Download Datasheet
MTB30P06VT4G Download Datasheet
MTB30P06VT4 Download Datasheet
MTB30P06V Download Datasheet
MTB30P06VT4 Download Datasheet
MTB30P06V Related Products:
Part Number MTB30P06V MTB30P06VG
Description 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified? incompatible conform to
package instruction CASE 418B-04, D2PAK-3 ROHS COMPLIANT, CASE 418B-04, D2PAK-3
Contacts 3 3
Manufacturer packaging code CASE 418B-04 CASE 418B-04
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 450 mJ 450 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 30 A 30 A
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.08 Ω 0.08 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
Maximum pulsed drain current (IDM) 105 A 105 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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