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NST489

Among 4 related components, NST489 have related pdf.
Part Number Manufacturer Description Datasheet
NST489AMT1 ON Semiconductor Bipolar Transistors - BJT 2A 50V NPN Download
NST489AMT1-D ON Semiconductor High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications Download
NST489AMT1G ON Semiconductor Bipolar Transistors - BJT SWITCHING DEVICE Download
NST489AMT1G Rochester Electronics 2000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, CASE 318G-02, TSSOP-6 Download
NST489 parameters:

Description

Bipolar Transistors - BJT 2A 50V NPN

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor(安森美)
Parts packaging codeTSSOP
package instructionCASE 318G-02, TSSOP-6
Contacts6
Manufacturer packaging code318G-02
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS
Maximum collector current (IC)2 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.75 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz

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