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FH103

Description
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

FH103 Overview

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

FH103 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.1 pF
Collector-emitter maximum voltage8 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz
Ordering number:ENN6217
NPN Epitaxial Planar Silicon Composite Transistor
FH103
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
· Composite type with 2 transistors contained in the
MCP package currently in use, improving the
mounting efficiency greatly.
· The FH103 is formed with two chips, being equiva-
lent to the 2SC4867, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
B1
B2
E2
1 2
0.65
2.0
3
0.2
0.425
Package Dimensions
unit:mm
2149
[FH103]
0.425
0.15
6
5
4
1.25
2.1
0 to 0.1
C1
E1
C2
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Mounted on a ceramic board (250mm
2
×0.8mm)
1unit
Mounted on a ceramic board (250mm
2
×0.8mm)
Conditions
0.9
Tr1
Tr2
Ratings
16
8
1.5
50
300
500
150
–55 to +150
0.2
0.25
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
Unit
V
V
V
mA
mW
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage Difference
Symbol
ICBO
IEBO
hFE
(small/large)
(large-small)
Conditions
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=15mA
VCE=5V, IC=15mA
VCB=5V, IC=15mA
Ratings
min
typ
max
1.0
10
90
0.7
0.95
1.0
200
Unit
µA
µA
hFE
VBE
mV
Continued on next page.
Note) The specifications shown above are for each individual transistor.
Marking : 103
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1706 No.6217–1/4
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