FJN3308R
FJN3308R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=47KΩ, R
2
=22KΩ)
• Complement to FJN4308R
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
10
100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
B
R2
R1
Equivalent Circuit
C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
=10µA, I
E
=0
I
C
=100µΑ, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=10mA, I
B
=0.5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=100µA
V
CE
=0.3V, I
C
=2mA
32
1.9
47
2.1
0.8
4
62
2.4
250
3.7
56
0.3
V
MHz
pF
V
V
KΩ
Min.
50
50
0.1
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJN3308R
Typical Characteristics
1000
100
V
CE
= 5V
R
1
= 47K
R
2
= 22K
V
CE
= 0.3V
R
1
= 47K
R
2
= 22K
V
I
(on)[V], INPUT VOLTAGE
h
FE
, DC CURRENT GAIN
10
100
1
10
1
10
100
1000
0.1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
400
1000
I
C
[
µ
A], COLLECTOR CURRENT
P
C
[mW], POWER DISSIPATION
V
CE
= 5V
R
1
= 47K
R
2
= 22K
350
300
250
200
100
150
100
50
10
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0
25
50
o
75
100
125
150
175
V
I
(off)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Programming Basics
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