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FK20VS-5

Description
HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size57KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FK20VS-5 Overview

HIGH-SPEED SWITCHING USE

FK20VS-5 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.24 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
FK20VS-5
HIGH-SPEED SWITCHING USE
FK20VS-5
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm
4.5
1.3
10.5MAX.
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
3.0
+0.3
–0.5
0
+0.3
–0
1
5
0.8
0.5
q w e
wr
2.6 ± 0.4
¡V
DSS ................................................................................
250V
¡r
DS (ON) (MAX) ..............................................................
0.24Ω
¡I
D .........................................................................................
20A
¡Integrated
Fast Recovery Diode (MAX.) ........150ns
q
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220S
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
250
±30
20
60
20
60
150
–55 ~ +150
–55 ~ +150
1.2
4.5
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
Typical value
(1.5)
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