MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
FK30SM-6
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
2
2
4
20.0
φ
3.2
5.0
1.0
q
5.45
w
e
5.45
19.5MIN.
4.4
0.6
2.8
4
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
¡V
DSS ................................................................................
300V
¡r
DS (ON) (MAX) ...........................................................
0.143Ω
¡I
D .........................................................................................
30A
¡Integrated
Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
300
±30
30
90
30
90
275
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 300V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
300
±30
—
—
2
—
—
10
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
0.110
1.65
15
2850
580
110
45
120
330
120
1.5
—
—
Max.
—
—
±10
1
4
0.143
2.15
—
—
—
—
—
—
—
—
2.0
0.45
150
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 150V, I
D
= 15A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 15A, V
GS
= 0V
Channel to case
I
S
= 30A, d
is
/d
t
= –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
3
2
10
2
7
5
3
2
10
1
7
5
3
2
250
200
150
100
50
0
tw=100µs
1ms
10ms
0
50
100
150
200
100ms
T
C
= 25°C
10
0
DC
Single Pulse
7
5
3
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
CASE TEMPERATURE T
C
(°C)
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
50
10V
T
C
= 25°C
Pulse Test
40
6V
30
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
=20V
20
10V
T
C
= 25°C
Pulse Test
5V
16
P
D
=
275W
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
12
20
5V
P
D
=
275W
4V
8
4.5V
4
4V
10
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
10
0.20
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
T
C
= 25°C
Pulse Test
0.16
V
GS
= 10V
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
8
I
D
= 50A
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
6
30A
0.12
20V
4
0.08
2
T
C
= 25°C
Pulse Test
0
0
4
8
12
16
15A
0.04
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
2
7
5
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= 10V
Pulse Test
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
32
24
3
2
10
1
7
5
3
2
10
0 0
10
2 3
5 7 10
1
T
C
= 25°C
75°C
125°C
16
8
0
0
4
8
12
16
20
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
10
3
7
5
3
2
10
3
7
5
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
(TYPICAL)
Ciss
t
d(off)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
t
f
10
2
7
5
3
2
10
1
10
0
2 3
t
r
t
d(on)
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 25Ω
5 7 10
1
2 3
5 7 10
2
Coss
10
2
Crss
7
5
3 Tch = 25°C
2 f = 1MHz
V
GS
= 0V
10
1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
SOURCE CURRENT I
S
(A)
20
Tch = 25°C
I
D
= 30A
16
V
GS
= 50V
T
C
=125°C
40
V
GS
= 0V
Pulse Test
75°C
25°C
12
100V
200V
30
8
20
4
10
0
0
40
80
120
160
200
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
50
100
150
200
250
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
4.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
GS
= 0V
I
D
= 1mA
1.2
REVERSE RECOVERY TIME t
rr
(ns)
1.4
1.0
3
2
10
2
t
rr
7
5
3
2
10
1 0
10
2 3
5 7 10
1
3
2
10
1
7
5
3
2
0.8
I
rr
0.6
0.4
–50
0
50
100
150
T
ch
= 25°C
T
ch
= 150°C
10
0
2 3
5 7 10
2
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch– c)
(°C/ W)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
5
5
3
2
t
rr
10
2
7
5
3
2
10
1
7
5
10
1
I
rr
I
S
= 30A
V
GS
= 0V
V
DD
= 150V
10
1
7
5
3
2
3
2
SOURCE CURRENT I
S
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY TIME t
rr
(ns)
2 3
5 7 10
2
10
0
T
ch
= 25°C
7
T
ch
= 150°C
5
2 3
5 7 10
3
10
0
7 D=1
5
3 0.5
2
0.2
10
–1
7 0.1
5
3
2
P
DM
tw
T
0.05
D= tw
0.02
T
0.01
Single Pulse
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
SOURCE CURRENT d
is
/d
t
(–A/µs)
REVERSE RECOVERY CURRENT I
rr
(A)
Feb.1999
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
3
10
2
10
d
is/
d
t
= –100A/µs
7
7
V
GS
= 0V
5
5
V
DD
= 150V
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