GDT5KP220A datasheet, PDF - EEWORLD Datasheet

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GDT5KP220A: DescriptionTrans Voltage Suppressor Diode, 5000W, 220V V(RWM), Unidirectional, Silicon, DIE; CategoryDiscrete semiconductor diode; File Size252KB，3 Pages; ManufacturerGood-Ark; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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GDT5KP220A Overview

Trans Voltage Suppressor Diode, 5000W, 220V V(RWM), Unidirectional, Silicon, DIE

GDT5KP220A Parametric

Parameter Name	Attribute value
Maker	Good-Ark
package instruction	X-XXUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	270 V
Minimum breakdown voltage	244 V
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	X-XXUC-N
Maximum non-repetitive peak reverse power dissipation	5000 W
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	220 V
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	UNSPECIFIED
Base Number Matches	1

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Peak Pulse Power 5000W

Glass Passivated TVS

Features

●

Glass passivated chip

●

Low inductance

●

Excellent clamping capability

●

Very fast response time

●

5000 W peak pulse power capability

with a 10/1000 µs waveform

●

Compatible with soldering

Devices for Bidirectional Applications

●

For bi-directional devices, use suffix C or CA

Electrical characteristics apply in both directions.

Process Details

Chip Type

GDT5KP

PDPW

(pcs/4"wafer)

191

Size（mil）

A (+1/-2)

220

B（±2）

C（±2）

189

D（±1）

1.5

Surface

Metalization

Ni(0.6~1um)/

Au(0.05um)

Maximum Ratings & Thermal Characteristics

(TA = 25 °C unless otherwise noted)

Parameter

Peak pulse power dissipation with a 10/1000µs waveform

(see fig. 1)

Peak pulse current with a waveform (see fig. 3 , single

pulse)

Symbol

PPM

VALUE

5000

See Next Table

UNIT

1. Non-repetitive current pulse, per Fig.3 and derated above T

=25℃ per Fig. 2

1/3

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