FMW6 datasheet, PDF - EEWORLD Datasheet

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FMW6: DescriptionGT 3C 3#16S PIN PLUG; CategoryDiscrete semiconductor The transistor; File Size63KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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FMW6 Overview

GT 3C 3#16S PIN PLUG

FMW6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	18 V
Configuration	SERIES, 2 ELEMENTS
Minimum DC current gain (hFE)	27
JESD-30 code	R-PDSO-G5
Number of components	2
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Transistors

EMX4 / UMW6N / UMW10N / UMX4N /

FMW6 / FMW10 / IMX4

High transition frequency (dual transistors)

EMX4 / UMW6N / UMW10N / UMX4N /

FMW6 / FMW10 / IMX4

!

Features

1) Two 2SC3837K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f

T

=1.5GHz)

3) Low output capacitance. (Cob=0.95pF)

!

Equivalent circuit

EMX4 / UMX4N

(3)

(2)

(1)

IMX4

(4)

(5)

(6)

UMW6N

(3)

(2)

(1)

FMW6

(3)

(4)

(5)

UMW10

(3)

(2)

(1)

FMW10

(3)

(4)

(5)

(4)

(5)

(6)

(3)

(2)

(1)

(4)

(5)

(2)

(1)

(4)

(5)

(2)

(1)

!

Absolute maximum ratings

(Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

EMX4 / UMW6N / UMW10N / UMX4N

FMW6 / FMW10 / IMX4

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pc

Tj

Tstg

Limits

30

18

3

50

150(TOTAL)

300(TOTAL)

150

−55

~

+150

Unit

V

mA

mW

∗1

∗2

Junction temperature

Storage temperature

∗1

120mW per element must not be exceeded.

∗2

200mW per element must not be exceeded.

°C

!

Electrical characteristics

(Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

h

FE

pairing

Transition frequency

Output capacitance

∗Transition

frequency of the device.

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

h

FE1 /

h

FE2

f

T

Cob

Min.

30

18

3

−

27

−

0.5

600

−

Typ.

−

1

1500

0.95

Max.

−

0.5

270

0.5

2

−

1.6

Unit

V

µA

−

V

−

MHz

pF

I

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

=10V

V

EB

=2V

Conditions

V

CE

/I

C

=10V/10mA

I

C

/I

B

=20mA/4mA

V

CE

/I

C

=10V/10mA

V

CE

/I

C

=10V/10mA,

f=200MHz

V

CB

/f=10V/1MHz, I

E

=0A

∗

FMW6 Related Products

	FMW6	UMX4N	UMW6N	UMW10N	FMW10	IMX4
Description	GT 3C 3#16S PIN PLUG	Transistor,	GT 3C 3#16S PIN PLUG	GT 3C 3#16S PIN PLUG	GT 3C 3#16S PIN PLUG	GT 3C 3#16S PIN PLUG
Is it Rohs certified?	conform to	-	conform to	-	conform to	conform to
Reach Compliance Code	unknow	-	compli	-	unknow	compli
Maximum collector current (IC)	0.05 A	-	0.05 A	-	0.05 A	0.05 A
Minimum DC current gain (hFE)	27	-	27	-	27	56
Number of components	2	-	2	-	2	2
Polarity/channel type	NPN	-	NPN	-	NPN	NPN
surface mount	YES	-	YES	-	YES	YES
Transistor component materials	SILICON	-	SILICON	-	SILICON	SILICON

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