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UMW6N

Description
GT 3C 3#16S PIN PLUG
CategoryDiscrete semiconductor    The transistor   
File Size63KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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UMW6N Overview

GT 3C 3#16S PIN PLUG

UMW6N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)27
Number of components2
Polarity/channel typeNPN
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
Transistors
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
Equivalent circuit
EMX4 / UMX4N
(3)
(2)
(1)
IMX4
(4)
(5)
(6)
UMW6N
(3)
(2)
(1)
FMW6
(3)
(4)
(5)
UMW10
(3)
(2)
(1)
FMW10
(3)
(4)
(5)
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
(2)
(1)
(4)
(5)
(2)
(1)
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
18
3
50
150(TOTAL)
300(TOTAL)
150
−55
~
+150
Unit
V
V
V
mA
mW
∗1
∗2
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
°C
°C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
Transition frequency
Output capacitance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
Min.
30
18
3
27
0.5
600
Typ.
1
1500
0.95
Max.
0.5
0.5
270
0.5
2
1.6
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=10V
V
EB
=2V
Conditions
V
CE
/I
C
=10V/10mA
I
C
/I
B
=20mA/4mA
V
CE
/I
C
=10V/10mA
V
CE
/I
C
=10V/10mA,
f=200MHz
V
CB
/f=10V/1MHz, I
E
=0A

UMW6N Related Products

UMW6N UMX4N UMW10N FMW10 FMW6 IMX4
Description GT 3C 3#16S PIN PLUG Transistor, GT 3C 3#16S PIN PLUG GT 3C 3#16S PIN PLUG GT 3C 3#16S PIN PLUG GT 3C 3#16S PIN PLUG
Is it Rohs certified? conform to - - conform to conform to conform to
Reach Compliance Code compli - - unknow unknow compli
Maximum collector current (IC) 0.05 A - - 0.05 A 0.05 A 0.05 A
Minimum DC current gain (hFE) 27 - - 27 27 56
Number of components 2 - - 2 2 2
Polarity/channel type NPN - - NPN NPN NPN
surface mount YES - - YES YES YES
Transistor component materials SILICON - - SILICON SILICON SILICON
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