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FR105

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size56KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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FR105 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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$ %    !"#
FR101
THRU
FR107
1 Amp
Silicon Rectifier
50 to 1000 Volts
DO-41
Low Cost
Low Leakage
Low Forward Voltage Drop
High Current Capability
Fast Switching Speed For High Efficiency
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
FR101
FR102
FR103
FR104
FR105
FR106
FR107
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
40V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
---
---
---
---
---
---
---
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1A
T
A
= 55°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
I
FM
= 1.0A;
Maximum
1.3V
Instantaneous
V
F
T
A
= 25°C
Forward Voltage
Maximum DC
Reverse Current At
I
R
5.0µA T
A
= 25°C
Rated DC Blocking
100µA T
A
= 100°C
Voltage
Maximum Reverse
Recovery Time
150ns I
F
=0.5A, I
R
=1.0A,
FR101-104
T
rr
250ns I
rr
=0.25A
FR105
500ns
FR106-107
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
D
C
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
www.mccsemi.com

FR105 Related Products

FR105 FR101 FR102 FR103 FR104 FR106 FR107
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE,1KV V(RRM),DO-41
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