FRF9150R datasheet, PDF - EEWORLD Datasheet

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FRF9150R: Description23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA; File Size51KB，6 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

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FRF9150D, FRF9150R,

FRF9150H

June 1998

23A, -100V, 0.140 Ohm, Rad Hard,

P-Channel Power MOSFETs

Package

TO-254AA

Features

• 23A, -100V, r

DS(ON)

= 0.140Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

Deﬁned End Point Specs at 300K RAD (Si) and 1000K RAD (Si)

Performance Permits Limited Use to 3000K RAD (Si)

Survives 3E9 RAD (Si)/s at 80% BV

DSS

Typically

Survives 2E12 Typically If Current Limited to IDM

7.0nA Per-RAD (Si)/s Typically

Pre-RAD Speciﬁcations for 3E13 Neutrons/cm

Usable to 3E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

Intersil Corporation has designed a series of SECOND GENERATION hardened

power MOSFETs of both N and P channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness

is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging

from 1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose rate hard-

ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with

current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for

any desired deviations from the data sheet.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

Symbol

Absolute Maximum Ratings

= +25

C, Unless Otherwise Speciﬁed

FRF9150D, R, H

-100

±20

125

1.00

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain-Gate Voltage (R

= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation

= +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

= +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

STG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

3243.2

4-1

FRF9150R Related Products

	FRF9150R	FRF9150H	FRF9150D
Description	23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA	23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA	0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

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