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FRM9250D

Description
16 A, 200 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
Categorysemiconductor    Discrete semiconductor   
File Size52KB,6 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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FRM9250D Overview

16 A, 200 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

FRM9250D, FRM9250R,
FRM9250H
June 1998
16A, -200V, 0.300 Ohm, Rad Hard,
P-Channel Power MOSFETs
Package
TO-204AA
Features
• 16A, -200V, RDS(on) = 0.300Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
-
-
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
12nA Per-RAD(Si)/sec Typically
Pre-RAD Specifications for 1E13 Neutrons/cm
2
Usable to 1E14 Neutrons/cm
2
• Gamma Dot
• Photo Current
• Neutron
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness
is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging
from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Symbol
D
G
S
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRM9250D, R, H
-200
-200
16
10
48
±20
150
60
1.2
48
16
48
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3267.3
4-1

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