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FS1UM-16A

Description
HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size49KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

FS1UM-16A Overview

HIGH-SPEED SWITCHING USE

FS1UM-16A Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)1 A
Maximum drain current (ID)1 A
Maximum drain-source on-resistance12.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)65 W
Maximum pulsed drain current (IDM)3 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
MITSUBISHI Nch POWER MOSFET
FS1UM-16A
HIGH-SPEED SWITCHING USE
FS1UM-16A
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
4.5
1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
7.0
φ
3.6
0.5
2.6
q w e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
q
¡V
DSS ................................................................................
800V
¡r
DS (ON) (MAX) ..............................................................
12.3Ω
¡I
D ............................................................................................
1A
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
800
±30
1
3
65
–55 ~ +150
–55 ~ +150
2
4.5MAX.
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value

FS1UM-16A Related Products

FS1UM-16A FS70SMJ-2
Description HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
Maker Mitsubishi Mitsubishi
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 100 V
Maximum drain current (Abs) (ID) 1 A 70 A
Maximum drain current (ID) 1 A 70 A
Maximum drain-source on-resistance 12.3 Ω 0.017 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 65 W 150 W
Maximum pulsed drain current (IDM) 3 A 280 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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