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FS2VS-16A

Description
HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

FS2VS-16A Overview

HIGH-SPEED SWITCHING USE

FS2VS-16A Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)85 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
FS2VS-16A
HIGH-SPEED SWITCHING USE
FS2VS-16A
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.3
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
3.0
+0.3
–0.5
1.5MAX.
10.5MAX.
0
+0.3
–0
1
5
0.8
0.5
q w e
wr
2.6 ± 0.4
q
¡V
DSS ................................................................................
800V
¡r
DS (ON) (MAX) ................................................................
6.0Ω
¡I
D ............................................................................................
2A
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
800
±30
2
6
85
–55 ~ +150
–55 ~ +150
1.2
4.5
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value
(1.5)

FS2VS-16A Related Products

FS2VS-16A FS7VS-14A
Description HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
Maker Mitsubishi Mitsubishi
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 800 V 700 V
Maximum drain current (Abs) (ID) 2 A 7 A
Maximum drain current (ID) 2 A 7 A
Maximum drain-source on-resistance 6 Ω 1.82 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 85 W 125 W
Maximum pulsed drain current (IDM) 6 A 21 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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