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FDD8770/FDU8770 N-Channel PowerTrench
®
MOSFET
March 2006
FDD8770/FDU8770
N-Channel PowerTrench
®
MOSFET
25V, 35A, 4.0mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Features
Max r
DS(on)
=
4.0mΩ at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
5.5mΩ at V
GS
= 4.5V, I
D
= 35A
Low gate charge: Q
g(10)
= 52nC(Typ), V
GS
= 10V
Low gate resistance
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
RoHS Compliant
LE
A
REE
I
DF
D
M
E
N
TA
TIO
L
E
N
MP
G
D
G D S
I-PAK
(TO-251AA)
S
Short Lead I-PAK
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
(Note 1)
(Note 2)
Parameter
Ratings
25
±20
35
210
407
113
115
-55 to 175
mJ
W
°C
A
Units
V
V
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in copper pad area
2
1.3
100
52
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDD8770
FDU8770
FDU8770
Device
FDD8770
FDU8770
FDU8770_F071
Package
TO-252AA
TO-251AA
TO-251AA
1
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDD8770/FDU8770 Rev. A
FDD8770/FDU8770 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
∆B
VDSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
I
D
= 250µA, referenced to
25°C
V
DS
= 20V,
V
GS
= 0V
V
GS
= ±20V
T
J
= 150°C
25
13.6
1
250
±100
V
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250µA
I
D
= 250µA, referenced to
25°C
V
GS
= 10V, I
D
= 35A
Drain to Source On Resistance
V
GS
= 4.5V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
1.2
1.6
-5.9
3.3
4.0
4.8
4.0
5.5
5.9
mΩ
2.5
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
f = 1MHz
2795
685
450
1.5
3720
915
675
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 5Ω
10
12
49
25
52
29
8.1
11
20
22
78
40
73
41
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 35A
V
GS
= 0V, I
S
= 15A
I
F
= 35A, di/dt = 100A/µs
I
F
= 35A, di/dt = 100A/µs
0.84
0.79
32
25
1.25
1.0
48
38
V
ns
nC
Notes:
1:
Pulse time < 300µs, Duty cycle = 2%.
2:
Starting T
J
= 25
o
C, L = 0.3mH, I
AS
= 27.5A ,V
DD
= 23V, V
GS
= 10V.
2
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com
FDD8770/FDU8770 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
120
I
D
, DRAIN CURRENT (A)
4
V
GS
= 3V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
100
80
60
40
20
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
3
V
GS
= 3.5V
V
GS
= 3V
2
V
GS
= 4.5V
1
V
GS
= 10V
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
0
0
20
40
60
80
I
D
, DRAIN CURRENT(A)
100
120
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
12
r
DS(on)
, ON-RESISTANCE (m
Ω
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 35A
V
GS
= 10V
I
D
= 35A
10
8
6
4
2
2
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
120
Figure 4. On-Resistance vs Gate to Source
Voltage
100
I
S
, REVERSE DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
100
80
60
40
20
0
1.0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
10
1
0.1
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.01
1E-3
0.0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDD8770/FDU8770 Rev. A
FDD8770/FDU8770 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
10
8
6
4
2
0
0
V
DD
= 10V
V
DD
= 13V
V
DD
= 16V
6000
C
iss
CAPACITANCE (pF)
1000
C
oss
C
rss
f = 1MHz
V
GS
= 0V
10
20
30
40
50
60
100 0.1
1
10
30
Q
g
, GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
50
Figure 8. Capacitance vs Drain to Source Voltage
250
I
D
, DRAIN CURRENT (A)
I
AS
, AVALANCHE CURRENT
(
A
)
T
J
= 25
o
C
200
150
100
o
10
T
J
= 150
o
C
V
GS
= 10V
T
J
= 125
o
C
V
GS
= 4.5V
R
θ
JC
= 1.3 C/W
50
0
25
1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE(ms)
100
300
50
75
100
125
150
T
C
, CASE TEMPERATURE(
o
C)
175
Figure 9. Unclamped Inductive Switching
Capability
600
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
20000
10000
P
(
PK
)
, PEAK TRANSIENT POWER (W)
10us
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175
–
T
C
----------------------
-
150
I
D
, DRAIN CURRENT (A)
100
100us
10
1ms
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
1000
1
10ms
DC
SINGLE PULSE
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
100
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
,
PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com
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