MITSUBISHI Nch POWER MOSFET
FS16UM-10
HIGH-SPEED SWITCHING USE
FS16UM-10
OUTLINE DRAWING
10.5MAX.
r
3.2
7.0
Dimensions in mm
4.5
1.3
16
φ
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
q
¡V
DSS ................................................................................
500V
¡r
DS (ON) (MAX) ..............................................................
0.56Ω
¡I
D ..........................................................................................
16A
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
500
±30
16
48
150
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS16UM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
G
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 8A, V
GS
= 10V
I
D
= 8A, V
GS
= 10V
I
D
= 8A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
500
±30
—
—
2
—
—
6.0
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
0.43
3.44
8.0
1700
230
40
30
50
170
60
1.5
—
Max.
—
—
±10
1
4
0.56
4.48
—
—
—
—
—
—
—
—
2.0
0.83
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
V
DD
= 200V, I
D
= 8A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 8A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
MAXIMUM SAFE OPERATING AREA
5
3
2
tw=10µs
100µs
1ms
10ms
DC
POWER DISSIPATION P
D
(W)
160
DRAIN CURRENT I
D
(A)
120
10
1
7
5
3
2
10
0
7
5
3
2
80
40
0
0
50
100
150
200
10
–1
7
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
=20V 10V 6V
P
D
=
150W
T
C
= 25°C
Pulse Test
5.5V
T
C
= 25°C
Single Pulse
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
P
D
=
150W
T
C
= 25°C
Pulse Test
20
DRAIN CURRENT I
D
(A)
40
V
GS
= 20V
30
10V
7V
6V
20
5V
DRAIN CURRENT I
D
(A)
16
12
8
5V
4
10
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16UM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
1.0
I
D
= 25A
16
T
C
= 25°C
Pulse Test
16A
8
8A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
T
C
= 25°C
Pulse Test
0.8
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
V
GS
= 10V
20V
12
0.6
0.4
4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
2
7
5
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= 10V
Pulse Test
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
32
24
3
2
10
1
7
5
3
2
10
0 0
10
2 3
125°C
75°C
16
T
C
= 25°C
8
0
0
4
8
12
16
20
5 7 10
1
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
10
3
7
5
3
2
10
3
7
5
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
f
t
r
t
d(on)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
2
7
5
3
2
10
1 0
10
2 3
Coss
10
2
7
5
Crss
3
Tch = 25°C
2
f = 1MHz
V
GS
= 0V
10
1
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
5 7 10
1
2 3
5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16UM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
T
C
= 125°C
V
GS
= 0V
Pulse Test
75°C
24
25°C
GATE-SOURCE VOLTAGE V
GS
(V)
16
V
DS
= 100V
12
200V
400V
8
SOURCE CURRENT I
S
(A)
80
100
Tch = 25°C
I
D
=16A
32
16
4
8
0
0
20
40
60
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–50
0
50
100
150
5.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
1.2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
10
0
D=1
7
5 0.5
3
2 0.2
0.1
10
–1
7
5
3
2
1.0
0.8
P
DM
tw
T
D= tw
T
0.6
0.4
–50
0
50
100
150
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
0.05
0.02
0.01
Single Pulse
CHANNEL TEMPERATURE Tch (°C)
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