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28C256TRT4FI-12

Description
EEPROM, 32KX8, 120ns, Parallel, CMOS, DFP-28
Categorystorage    storage   
File Size196KB,14 Pages
ManufacturerMaxwell Technologies Inc.
Download Datasheet Parametric View All

28C256TRT4FI-12 Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, DFP-28

28C256TRT4FI-12 Parametric

Parameter NameAttribute value
Parts packaging codeDFP
package instructionDFP,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time120 ns
JESD-30 codeR-XDFP-F28
length18.288 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height4.8006 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose40k Rad(Si) V
width10.414 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
28C256T
256K EEPROM (32K x 8-Bit)
EEPROM
V
CC
GND
DATA INPUTS/OUTPUTS
I/O0 - I/O7
OE
WE
CE
OE, CE, and WE
LOGIC
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y-GATING
CELL MATRIX
Y DECODER
ADDRESS
INPUTS
X DECODER
IDENTIFICATION
Logic Diagram
Memory
F
EATURES
:
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 120 MeV/mg/cm
2
- SEU
TH
LET (read mode): > 90 MeV/mg/cm
2
- SEU
TH
LET (write mode): > 18 MeV/mg/cm
2
• Package:
- 28 pin R
AD
-P
AK
® flat pack
- 28 pin R
AD
-P
AK
® DIP
- JEDEC approved byte wide pinout
• High Speed:
- 120, 150 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page Write Mode:
- 1 to 64 bytes
• Low power dissipation:
- 15 mA active current (cycle = 1 µ s)
- 20 µ A standby current (CE = V
CC
)
D
ESCRIPTION
:
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page pro-
grammability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and program-
ming operations.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
02.18.02 Rev 5
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
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