CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
-100
-
-2.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -50,
I
D
= 22A
-
-
-
-
-
I
D
= 22A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.090
-
-
-
-
-
-
130
-
21
51
-6
3500
1000
300
-
-
MAX
-
-7.0
-6.0
-
25
250
100
200
-3.23
0.140
0.217
110
390
300
170
240
160
9.5
29
65
-
-
-
-
1.0
48
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -80V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 22A
I
D
= 14A,
V
GS
= -12V
T
C
= 25
o
C
T
C
= 125
o
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -50V, I
D
= 22A,
R
L
= 2.27Ω, V
GS
= -12V,
R
GS
= 4.7Ω
3-210
FSF9150D, FSF9150R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 22A
I
SD
= 22A, dI
SD
/dt = 100A/µs
MIN
-0.6
-
TYP
-
-
MAX
-1.8
270
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= -80V
V
GS
= -12V, I
D
= 22A
V
GS
= -12V, I
D
= 14A
MIN
-100
-2.0
-
-
-
-
MAX
-
-6.0
100
25
-3.23
0.140
UNITS
V
V
nA
µA
V
Ω
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
20
10
15
20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
-100
-100
-80
-50
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
Unless Otherwise Specified
1E-3
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LIMITING INDUCTANCE (HENRY)
-120
-100
-80
V
DS
(V)
-60
-40
-20
0
0
TEMP = 25
o
C
5
10
V
GS
(V)
15
20
25
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
-10
-30
-100
DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-211
FSF9150D, FSF9150R
Typical Performance Curves
24
Unless Otherwise Specified
(Continued)
100
T
C
= 25
o
C
100µs
20
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN (A)
16
10
1ms
10ms
100ms
12
8
4
0
-50
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0
50
100
150
0.1
-1
T
C
, CASE TEMPERATURE (
o
C)
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-100
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 14A
2.0
NORMALIZED r
DS(ON)
-12V
Q
G
1.5
Q
GS
Q
GD
1.0
V
G
0.5
0.0
CHARGE
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
NORMALIZED
0.1
P
DM
t
1
t
2
10
0
10
1
0.001
10
-5
10
-4
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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