CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
200
-
1.5
0.5
-
-
-
TYP
-
-
-
-
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 100V,
I
D
= 44A
-
-
-
-
-
I
D
= 44A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
0.043
-
-
-
-
-
-
160
-
29
83
8
4400
900
280
-
-
MAX
-
5.0
4.0
-
25
250
100
200
2.31
0.050
0.093
40
95
100
25
280
180
10
38
93
-
-
-
-
0.65
40
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 44A
I
D
= 28A,
V
GS
= 12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 100V, I
D
= 44A,
R
L
= 2.27Ω, V
GS
12V,
R
GS
= 2.35Ω
3-144
FSJ260D, FSJ260R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 44A
I
SD
= 44A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 44A
V
GS
= 12V, I
D
= 28A
MIN
200
1.5
-
-
-
-
MAX
-
4.0
100
25
2.31
0.050
UNITS
V
V
nA
µA
V
Ω
MIN
0.6
-
TYP
-
-
MAX
1.8
560
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-5
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
200
200
160
100
40
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
Unless Otherwise Specified
1E-3
LIMITING INDUCTANCE (HENRY)
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
200
160
V
DS
(V)
120
80
40
0
0
TEMP = 25
o
C
-5
-10
V
GS
(V)
-15
-20
-25
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-145
FSJ260D, FSJ260R
Typical Performance Curves
60
Unless Otherwise Specified
(Continued)
300
T
C
= 25
o
C
100
I
D
, DRAIN CURRENT (A)
50
I
D
, DRAIN (A)
40
100µs
10
1ms
10ms
1
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
30
20
10
0.1
0.1
0
-50
0
50
100
T
C
, CASE TEMPERATURE (
o
C)
150
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
1000
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 28A
2.0
NORMALIZED r
DS(ON)
12V
Q
G
1.5
Q
GS
Q
GD
1.0
V
G
0.5
0.0
-80
CHARGE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
NORMALIZED THERMAL RESPONSE (Z
θ
JC
)
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
0.01
t
2
10
1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
User command #1: C:WAVE6000\BIN\wave.exe /k ---Error:User Command terminated, Exit-Code = 1 "Web51" - 1 Error(s), 0 Warning(s). This error is very common. Please give me some advice....
Recently, I have been using the output level of the STM32 IO port to input the input of the L298N, and then used it to drive the motor. However, I don’t know why the output voltage of the L298N is alw...
In the Power System Design article, “Active and Passive Balancing of Battery Management Systems,” Stefano Zanella describes how multi-cell systems can become unbalanced. In this article, I want to exp...
Embedded System
京公网安备 11010802033920号
EEWORLD
