CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
1.5
0.5
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 1.0A
-
-
-
-
-
I
D
= 1.0A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.570
-
-
-
-
-
-
8.7
-
1.4
4.2
6
155
70
20
-
MAX
-
5.0
4.0
-
25
250
100
200
0.71
0.680
1.09
15
15
25
20
14
9.7
0.54
1.7
4.7
-
-
-
-
100
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 1.0A
I
D
= 0.6A,
V
GS
= 12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DD
= 50V, I
D
= 1.0A,
R
L
= 50Ω, V
GS
= 12V,
R
GS
= 7.5Ω
2
FSR1110D, FSR1110R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 1.0A
I
SD
= 1.0A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 1.0A
V
GS
= 12V, I
D
= 0.6A
MIN
100
1.5
-
-
-
-
MAX
-
4.0
100
25
0.710
0.680
UNITS
V
V
nA
µA
V
Ω
MIN
0.6
-
TYP
-
-
MAX
1.8
110
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
28
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
100
100
80
50
3
FSR1110D, FSR1110R
Typical Performance Curves
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
1E-3
120
100
80
V
DS
(V)
60
40
20
0
0
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
TEMP = 25
o
C
-5
-10
V
GS
(V)
-15
-20
-25
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
10
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
I
D
, DRAIN (A)
1
5ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
50ms
100
1000
0
50
100
150
0.1
0.1
1
10
T
C
, CASE TEMPERATURE (
o
C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 0.6A
2.0
12V
Q
G
NORMALIZED r
DS(ON)
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
4
FSR1110D, FSR1110R
Typical Performance Curves
(Continued)
10
THERMAL MATRIX
T
1
1
0.5
0.2
0.1
0.05
0.02
0.01 0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
t
2
10
2
10
3
SINGLE PULSE
P
DM
T
2
T
3
T
4
=
THERMAL RESPONSE (Z
θJC
)
P
1
.73P
1
.73P
1
.73P
1
.73P
2
P
2
.73P
2
.73P
2
.73P
3
.73P
3
P
3
.73P
3
.73P
4
.73P
4
.73P
4
P
4
_
* [R
0JA
]
0.1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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