CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
1.5
0.5
-
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 1.0A
-
-
-
-
-
I
D
= 1.0A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.570
-
-
-
-
-
-
8.7
-
1.4
4.2
6
155
70
20
-
MAX
-
5.0
4.0
-
25
250
100
200
0.71
0.680
1.09
15
15
25
20
14
9.7
0.54
1.7
4.7
-
-
-
-
100
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 1.0A
I
D
= 0.6A,
V
GS
= 12V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DD
= 50V, I
D
= 1.0A,
R
L
= 50Ω, V
GS
= 12V,
R
GS
= 7.5Ω
2
FSR1110D, FSR1110R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 1.0A
I
SD
= 1.0A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 1.0A
V
GS
= 12V, I
D
= 0.6A
MIN
100
1.5
-
-
-
-
MAX
-
4.0
100
25
0.710
0.680
UNITS
V
V
nA
µA
V
Ω
MIN
0.6
-
TYP
-
-
MAX
1.8
110
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT
(NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
28
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
100
100
80
50
3
FSR1110D, FSR1110R
Typical Performance Curves
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
1E-3
120
100
80
V
DS
(V)
60
40
20
0
0
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
TEMP = 25
o
C
-5
-10
V
GS
(V)
-15
-20
-25
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
10
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
I
D
, DRAIN (A)
1
5ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
50ms
100
1000
0
50
100
150
0.1
0.1
1
10
T
C
, CASE TEMPERATURE (
o
C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms,V
GS
= 12V, I
D
= 0.6A
2.0
12V
Q
G
NORMALIZED r
DS(ON)
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
4
FSR1110D, FSR1110R
Typical Performance Curves
(Continued)
10
THERMAL MATRIX
T
1
1
0.5
0.2
0.1
0.05
0.02
0.01 0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
t
2
10
2
10
3
SINGLE PULSE
P
DM
T
2
T
3
T
4
=
THERMAL RESPONSE (Z
θJC
)
P
1
.73P
1
.73P
1
.73P
1
.73P
2
P
2
.73P
2
.73P
2
.73P
3
.73P
3
P
3
.73P
3
.73P
4
.73P
4
.73P
4
P
4
_
* [R
0JA
]
0.1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
My phone has 2 megapixels, and the resolution is pretty good when taking photos. But when recording videos, the resolution is only 120×160, which is frustrating. I use Directshow to collect data. The ...
I am a Java major student. I recently got a Black Hawk development board EP4CE30. I can turn on the lights. Since the school courses focus on Java, I have no basic knowledge of digital electronics. I ...
I am a beginner in analog electronics, and I don't quite understand one part of feedback. Please advise me. I am not very clear about whether to introduce voltage or current from the output terminal. ...
I malloced a 1.5MB data block in my evc program and want to get its physical address and pass it to the display hardware register. Is there any way to do this?...
Dual-mode inverters can operate both in conjunction with the grid and independently. These inverters can inject excess energy from renewable energy and storage devices into the grid, and withdraw p...[Details]
While
the solid-state battery
industry is still engaged in a long technological marathon for
the "ultimate solution" for
electric vehicles
, some companies have begun looking for mor...[Details]
Limited vocabulary recognition
According to the number of characters, words or short sentences in the vocabulary, it can be roughly divided into: less than 100 is small vocabulary; 100-1000 is...[Details]
In mobile technology, sensors are the primary input for measured signals and form a component of a sensor system. They include sensitive and transducer elements connected to carriers and circuits. ...[Details]
Recently,
Xpeng Motors and Xinlian Integrated Circuit jointly announced the mass production of China's first hybrid silicon carbide product.
Designed and developed by Xpeng Motors and joint...[Details]
summary
There are multiple approaches to making industrial systems more intelligent, including applying artificial intelligence (AI) technology at the edge and in the cloud to sensor...[Details]
For healthcare professionals, accurate diagnosis and treatment are crucial for a clear picture of a person's health. However, healthcare professionals often rely on tests at medical facilities, cli...[Details]
Gross profit margin jumped from 13.6% in the first half of last year to 25.9%, almost doubling year-on-year.
On August 21, RoboSense released its interim performance report, in which the...[Details]
On August 20th, Tiantai Robotics Co., Ltd., along with strategic partners including Shandong Future Robotics Technology Co., Ltd., Shandong Future Data Technology Co., Ltd., and Gangzai Robotics Gr...[Details]
On August 22, South Korean media Nate reported on the 20th local time that Samsung Electronics is introducing Hyper Cell technology into its most advanced 2nm process technology, striving to improv...[Details]
The complexity of the integrated circuits (ICs) used in electronic systems in vehicles is increasing. They aim to execute artificial intelligence (AI) algorithms to control autonomous driving funct...[Details]
PowiGaN achieves 95% efficiency at both light and full loads, meeting critical operational and safety requirements.
DARWIN, Australia and SAN JOSE, Calif.,
August 22, 2025 – Powe...[Details]
The 2025 China International Automotive Testing Exhibition will be held at the Shanghai World Expo Exhibition and Convention Center from August 27 to 29, 2025.
Clacton Seafront, UK, ...[Details]
Chinese characters are extensive and profound, and there are many different names for ESD tubes. How many of them do you know?
As far as I know, ESD diodes are currently known as ESD p...[Details]
Linear motor modules have become the "sweet spot" in various fields due to their advantages such as long stroke, fast speed, high precision, smooth operation and long life. Different models of line...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
