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BCW33LT3G

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 22uF 6.3volts *Derate Voltage/Temp
CategoryDiscrete semiconductor    The transistor   
File Size213KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BCW33LT3G Overview

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 22uF 6.3volts *Derate Voltage/Temp

BCW33LT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time2 weeks
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
SOT−23
(TO−236)
CASE 318−08
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2),
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
D3 M
G
G
D3
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BCW33LT1G
SBCW33LT1G
BCW33LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
November, 2016 − Rev. 6
Publication Order Number:
BCW33LT1/D
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