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BC847QASX

Description
Bipolar Transistors - BJT 45 V, 100 mA NPN/NPN gen purpose trans
Categorysemiconductor    Discrete semiconductor   
File Size193KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC847QASX Overview

Bipolar Transistors - BJT 45 V, 100 mA NPN/NPN gen purpose trans

BC847QASX Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity5000
DF
N1
BC847QAS
8 July 2015
01
0B
-6
45 V, 100 mA NPN/NPN general-purpose transistor
Product data sheet
1. General description
NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: BC857QAS.
NPN/PNP complement: BC847QAPN.
2. Features and benefits
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Low package height of 0.37 mm
3. Applications
General-purpose switching and amplification
Mobile applications
4. Quick reference data
Table 1.
Symbol
Per transistor
V
CEO
I
C
Per transistor
h
FE
DC current gain
V
CE
= 5 V; I
C
= 2 mA; T
amb
= 25 °C
200
-
450
collector-emitter
voltage
collector current
open base
-
-
-
-
45
100
V
mA
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
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