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FQB1P50
P-Channel
QFET
®
MOSFET
MAY
2015
FQB1P50
P-Channel
QFET
®
MOSFET
- 500 V, - 1.5 A, 10.5 Ω
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• - 1.5 A, - 500 V, R
DS(on)
= 10.5
Ω
(Max.)
@ V
GS
= - 10 V,
I
D
= - 0.75 A
• Low
Gate Charge
(Typ. 11 nC)
• Low Crss (Typ. 6.0 pF)
• 100%
Avalanche Tested
•
RoHS
Compliant
S
D
G
G
S
D
2
-PAK
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB1P50TM
-500
-1.5
-0.95
-6.0
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8” from case for 5 seconds
110
-1.5
6.3
-4.5
3.13
63
0.51
-55 to +150
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
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ADI Reference Circuit
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