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SF1606G

Description
MOSFET 600V N-Channel SupreMOS
CategoryDiscrete semiconductor    diode   
File Size384KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SF1606G Overview

MOSFET 600V N-Channel SupreMOS

SF1606G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC PACKAGE-3
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfacePure Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SF1601G - SF1608G
Taiwan Semiconductor
CREAT BY ART
16A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SF
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@8A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=100°C
G
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
80
1.5
- 55 to +150
- 55 to +150
0.975
10
400
35
60
50
35
50
SF
G
100
70
100
SF
G
150
105
150
SF
G
200
140
200
16
125
1.3
1.7
SF
G
300
210
300
SF
G
400
280
400
SF
G
500
350
500
SF
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
G
600
480
600
SYMBOL 1601 1602 1603 1604 1605 1606 1607 1608
Version: H1511

SF1606G Related Products

SF1606G SF1607G SF1605G SF1608G SF1604G
Description MOSFET 600V N-Channel SupreMOS Rectifiers 16A,500V,GLASS Pass SUPER FAST,DUAL Rect Rectifiers 16A,300V,GLASS Pass SUPER FAST,DUAL Rect Rectifiers 16A 600V Rectifiers 200V 16A UltraFast
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant compliant compliant compliant compliant
Other features FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.7 V 1.3 V 1.7 V 0.975 V
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Humidity sensitivity level 1 1 1 1 1
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A
Number of components 2 2 2 2 2
Phase 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 500 V 300 V 600 V 200 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO
Terminal surface Pure Tin (Sn) Pure Tin (Sn) Pure Tin (Sn) Pure Tin (Sn) PURE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
ECCN code - EAR99 - EAR99 EAR99
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