6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M
MOC3062-M
PACKAGE
MOC3063-M
MOC3162-M
MOC3163-M
SCHEMATIC
ANODE 1
6 MAIN TERM.
6
6
1
N/C 3
CATHODE 2
5 NC*
1
ZERO
CROSSING
CIRCUIT
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
6
1
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon
detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the inter-
face of logic systems to equipment powered from 115/240 VAC lines, such as solid-state relays, industrial controls, motors, sole-
noids and consumer appliances, etc.
FEATURES
• Simplifies logic control of 115/240 VAC power
• Zero voltage crossing
• dv/dt of 1000 V/µs guaranteed (MOC316X-M),
– 600 V/ms guaranteed (MOC306X-M)
• VDE recognized (File # 94766)
– ordering option V (e.g., MOC3063V-M)
• Underwriters Laboratories (UL) recognized (File #E90700, volume 2)
APPLICATIONS
•
•
•
•
•
•
•
•
Solenoid/valve controls
Static power switches
Temperature controls
AC motor starters
Lighting controls
AC motor drives
E.M. contactors
Solid state relays
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M
MOC3062-M
MOC3063-M
MOC3162-M
MOC3163-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation
Surge Voltage
(4)
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
DETECTOR
Off-State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100 µs, 120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
V
DRM
I
TSM
P
D
All
All
All
600
1
150
1.76
V
A
mW
mW/°C
I
F
V
R
P
D
All
All
All
60
6
120
1.41
mA
V
mW
mW/°C
T
STG
T
OPR
T
SOL
T
J
V
ISO
P
D
All
All
All
All
All
All
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
250
2.94
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
Symbol
Device
Value
Units
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M
MOC3062-M
MOC3063-M
MOC3162-M
MOC3163-M
ELECTRICAL CHARACTERISTICS
(TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Peak Blocking Current, Either Direction
Critical Rate of Rise of Off-State Voltage
Test Conditions
I
F
= 30 mA
V
R
= 6 V
V
DRM
= 600V, I
F
= 0 (note 1)
I
F
= 0 (figure 9, note 3)
Symbol
V
F
I
R
I
DRM1
dv/dt
Device
All
All
MOC316X-M
MOC306X-M
MOC306X-M
MOC316X-M
Min
Typ*
1.3
0.005
10
10
1500
Max
1.5
100
100
500
Units
V
µA
nA
V/µs
600
1000
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
MOC3061-M
MOC3062-M/
MOC3162-M
MOC3063-M/
MOC3163-M
All
All
1.8
500
Min
Typ*
Max
15
10
5
3
V
µA
mA
Units
LED Trigger Current
(rated I
FT
)
main terminal
Voltage = 3V (note 2)
I
FT
Peak On-State Voltage, Either Direction
Holding Current, Either Direction
I
TM
= 100 mA peak,
I
F
= rated I
FT
V
TM
I
H
ZERO CROSSING CHARACTERISTICS
Characteristics
Inhibit Voltage (MT1-MT2 voltage
above which device will not
trigger)
Leakage in Inhibited State
Test Conditions
I
F
= Rated I
FT
I
F
= Rated I
FT
,
V
DRM
= 600V, off state
Symbol
V
INH
I
DRM2
Device
MOC3061-M/2M/3M
MOC3062-M/3M
All
Min
Typ*
12
12
150
Max
20
15
500
V
µA
Units
ISOLATION CHARACTERISTICS
Characteristics
Isolation Voltage
*Typical values at T
A
= 25°C
Notes
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating I
F
lies
between max I
FT
(15 mA for MOC3061-M, 10 mA for MOC3062-M & MOC3162-M, 5 mA for MOC3063-M & MOC3163-M) and
absolute max I
F
(60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4. Isolation surge voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common,
and Pins 4, 5 and 6 are common.
© 2003 Fairchild Semiconductor Corporation
Test Conditions
f = 60 Hz, t = 1 sec
Symbol
V
ISO
Device
All
Min
7500
Typ*
Max
Units
V
Page 3 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M
MOC3062-M
MOC3063-M
MOC3162-M
MOC3163-M
Figure 1. LED Forward Voltage vs. Forward Current
1.7
1.6
V
F
, FORWARD VOLTAGE (V)
1.5
1.4
1.4
I
FT
, NORMALIZED
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
T
A
= -40°C
T
A
= 25°C
1.3
1.2
1.1
1.0
0.9
0.8
-40
1.6
1.5
Figure 2. Trigger Current Vs. Temperature
V
TM
= 3V
NORMALIZED TO T
A
= 25°C
T
A
= 85°C
1
10
100
-20
0
20
40
60
80
100
I
F
, LED FORWARD CURRENT (mA)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. LED Current Required to Trigger vs.
LED Pulse Width
16
I
FT
, LED TRIGGER CURRENT (NORMALIZED)
14
12
10
8
6
4
2
0
1
10
PW
IN
, LED TRIGGER PULSE WIDTH (µs)
100
T
A
= 25°C
NORMALIZED TO PW
IN
>> 100µs
10000
Figure 4. Leakage Current, IDRM vs. Temperature
I
DRM
, LEAKAGE CURRENT (nA)
1000
100
10
1
0.1
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 10
5/29/03
6-PIN DIP ZERO-CROSS
PHOTOTRIAC DRIVER OPTOCOUPLER
(600V PEAK)
MOC3061-M
MOC3062-M
MOC3063-M
MOC3162-M
MOC3163-M
Figure 5. I
DRM2
, Leakage in Inhibit State vs. Temperature
2.4
2.2
I
TM
, ON-STATE CURRENT (mA)
2.0
1.8
I
DRM2
, NORMALIZED
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40
I
F
= RATED I
FT
NORMALIZED TO T
A
= 25°C
800
600
400
200
0
-200
-400
-600
-800
-4
-3
Figure 6. On-State Characteristics
T
A
= 25°C
-20
0
20
40
60
80
100
-2
-1
0
1
2
3
4
T
A
, AMBIENT TEMPERATURE (°C)
V
TM
, ON-STATE VOLTAGE (VOLTS)
Figure 7. I
H
, Holding Current vs. Temperature
3.2
I
H
, HOLDING CURRENT (NORMALIZED)
2.8
2.4
V
INH
, NORMALIZED
2.0
1.6
1.2
0.8
0.85
0.4
0.0
-40
0.80
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
1.20
1.15
Figure 8. Inhibit Voltage vs. Temperature
NORMALIZED TO T
A
= 25°C
1.10
1.05
1.00
0.95
0.90
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 10
5/29/03
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