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MMPQ3725

Description
NPN Switching Transistor
CategoryDiscrete semiconductor    The transistor   
File Size167KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MMPQ3725 Overview

NPN Switching Transistor

MMPQ3725 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSOIC
package instructionSOIC-16
Contacts16
Reach Compliance Codecompli
Is SamacsysN
Maximum collector current (IC)1 A
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JEDEC-95 codeMS-012AC
JESD-30 codeR-PDSO-G16
JESD-609 codee0
Number of components1
Number of terminals16
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
TN3725A / MMPQ3725
Discrete POWER & Signal
Technologies
TN3725A
MMPQ3725
E
B
E
B
E
B
E
B
C
TO-226
BE
SOIC-16
C
C
C
C
C
C
C
C
NPN Switching Transistor
This device is designed for high speed core driver applications
up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
60
6.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
TN3725A
1.0
8.0
50
125
Max
MMPQ3725
1.0
8.0
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
125
240
©
1997 Fairchild Semiconductor Corporation

MMPQ3725 Related Products

MMPQ3725 TN3725 TN3725A
Description NPN Switching Transistor NPN Switching Transistor NPN Switching Transistor
Is it Rohs certified? incompatible - incompatible
Maker Fairchild - Fairchild
package instruction SOIC-16 - CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli - unknow
Maximum collector current (IC) 1 A - 1.2 A
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 35 - 25
JEDEC-95 code MS-012AC - TO-226
JESD-30 code R-PDSO-G16 - O-PBCY-T3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 16 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - ROUND
Package form SMALL OUTLINE - CYLINDRICAL
Polarity/channel type NPN - NPN
Certification status Not Qualified - Not Qualified
surface mount YES - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form GULL WING - THROUGH-HOLE
Terminal location DUAL - BOTTOM
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
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