TN3725A / MMPQ3725
Discrete POWER & Signal
Technologies
TN3725A
MMPQ3725
E
B
E
B
E
B
E
B
C
TO-226
BE
SOIC-16
C
C
C
C
C
C
C
C
NPN Switching Transistor
This device is designed for high speed core driver applications
up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
60
6.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
TN3725A
1.0
8.0
50
125
Max
MMPQ3725
1.0
8.0
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
125
240
©
1997 Fairchild Semiconductor Corporation
TN3725A / MMPQ3725
NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
V
BE
= 0
I
C
= 10
µA,
I
CE
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 100°C
V
CE
= 80 V, V
EB
= 0
40
60
60
6.0
1.7
120
10
V
V
V
V
µA
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
=100mA,V
CE
=1.0V,T
A
= -55°C
I
C
= 300 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
=500mA,V
CE
=1.0V,T
A
= -55°C
I
C
= 800 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 1.0 A, I
B
= 100 mA
30
60
30
40
35
20
20
25
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
300
10
55
MHz
pF
pF
SWITCHING CHARACTERISTICS
(except MMPQ3725)
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 30 V, I
C
= 500 mA
I
B1
= I
B2
= 50 mA
V
CC
= 30 V, V
BE(
off
)
= 3.8 V,
I
C
= 500 mA, I
B1
= 50 mA
35
10
30
60
50
30
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
TN3725A / MMPQ3725
NPN Switching Transistor
(continued)
DC Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
200
V
CE
= 1V
150
125 º
C
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β
= 10
0.6
25 °C
100
25 °C
0.4
125 º
C
50
- 40 ºC
0.2
1
- 40 ºC
0
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
P2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P 25
1000
1.2
1
0.8
0.6
0.4
0.2
0
1
I
C
10
100
- COLLECTOR CURRENT (mA)
1000
- 40 ºC
25 °C
125 º
C
V
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
-
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
0.8
- 40 ºC
0.6
25 °C
β
= 10
0.4
125 º
C
V
CE
= 1V
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
P2
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (uA)
100
10
1
0.1
V
CB
= 40V
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE ( ºC)
P 25
150
TN3725A / MMPQ3725
NPN Switching Transistor
(continued)
AC Typical Characteristics
Input/Output Capacitance
vs. Reverse Bias
Contours of Constant
Bandwidth Product (f
T
)
Switching Time vs.
Collector Current
Turn On / Turn Off Times
vs. Collector Current
Switching Times vs.
Ambient Temperature
Delay Time vs. Turn On Base Current
and Reverse Base-Emitter Voltage
TN3725A / MMPQ3725
NPN Switching Transistor
(continued)
AC Typical Characteristics
(continued)
Rise Time vs. Collector and
Turn On Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
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