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MMDL6050T1

Description
0.2 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size86KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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MMDL6050T1 Overview

0.2 A, SILICON, SIGNAL DIODE

MMDL6050T1 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
Maximum non-repetitive peak forward current0.5 A
Number of components1
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.004 µs
surface mountYES
LESHAN RADIO COMPANY, LTD.
Switching Diode
MMDL6050T1
1
CATHODE
2
ANODE
1
2
CASE 477–02, STYLE 1
SOD-323
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
P
D
Max
200
1.57
635
150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
DEVICE MARKING
MMDL6050T1 = 5A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFFCHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 50 Vdc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
Capacitance (V
R
= 0 V)
V
(BR)
I
R
V
F
70
0.1
Vdc
µAdc
Vdc
0.55
0.85
t
rr
C
0.7
1.1
4.0
2.5
ns
pF
S3–1/3

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