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8GBU12

Description
8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

8GBU12 Overview

8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE

8GBU12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T4
Contacts4
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current210 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Bulletin I2719 rev. F 11/02
8GBU Series
8.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS
)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
Bridge Rectifier
I
O(AV)
= 8A
V
RRM
= 50/ 1200V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
8GBU
8
100
200
210
200
184
50 to 1200
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
8GBU
C
www.irf.com
1

8GBU12 Related Products

8GBU12 8GBU005 8GBU 8GBU01 8GBU02 8GBU06 8GBU04 8GBU10 8GBU08
Description 8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible - incompatible incompatible incompatible incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Contacts 4 4 - 4 4 4 4 4 4
Reach Compliance Code unknow unknow - unknow unknow unknown unknown unknow unknow
Other features UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V - 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e0 e0 - e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 210 A 210 A - 210 A 210 A 210 A 210 A 210 A 210 A
Number of components 4 4 - 4 4 4 4 4 4
Phase 1 1 - 1 1 1 1 1 1
Number of terminals 4 4 - 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 8 A 8 A - 8 A 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 50 V - 100 V 200 V 600 V 400 V 1000 V 800 V
surface mount NO NO - NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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