Bulletin I2719 rev. F 11/02
8GBU Series
8.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS
)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
Bridge Rectifier
I
O(AV)
= 8A
V
RRM
= 50/ 1200V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
8GBU
8
100
200
210
200
184
50 to 1200
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
8GBU
C
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1
8GBU Series
Bulletin I2719 rev. F 11/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage V
RRM
, max repetitive V
RSM
, max non-repetitive V
RMS
, max RMS I
RRM
max.
I
RRM
max.
Code
peak rev. voltage
peak rev. voltage
voltage
@ rated V
RRM
@ rated V
RRM
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= 25°C
T
J
= 150°C
V
V
V
V
µA
µA
005
01
02
04
06
08
10
12
50
100
200
400
600
800
1000
1200
80
150
300
500
725
900
1100
1300
35
70
140
280
420
560
700
850
5
5
5
5
5
5
5
5
400
400
400
400
400
400
400
400
8GBU
Forward Conduction
Parameters
I
O
I
FSM
Maximum DC output current
Maximum peak, one-cycle
non-repetitive surge current,
following any rated load condition
and with rated V
RRM
reapplied
I
2
t
V
FM
I
RM
V
RRM
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse leakage
curren t per diode
Maximum repetitive peak
reverse voltage range
200
184
1.0
5.0
400
50 to 1200
V
µA
V
A
2
s
t = 10ms
t = 8.3ms
T
J
= 25
o
C, I
FM
= 8A
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
210
t = 8.3ms
T
J
= 150°C
8GBU
8.0
6.4
200
Unit
A
Conditions
T
C
= 100°C, Resistive & inductive load
T
C
= 100°C, Capacitive load
t = 10ms
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
R
thJC
R
thJA
W
T
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
4 (0.14)
1.0
9.0
g (oz)
Nm
Lb.in
Bridge to Heatsink
21
°C/ W
DC rated current through bridge (1)
2.2
°C/ W
DC rated current through bridge (1)
8GBU
-55 to 150
Unit
o
Conditions
C
Note (1): Bridge mounted on Aluminun heat sink of dim 82x82x3.0mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
2
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8GBU Series
Bulletin I2719 rev. F 11/02
Ordering Information Table
Device Code
8
1
1
2
3
-
-
-
GBU
2
12
3
Bridge current
Basic Part Number
Voltage Code: code x 100 = V
RRM
Outline Table
All dimensions are in millimeters
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3
8GBU Series
Bulletin I2719 rev. F 11/02
Maximum Allowable Case Temperature (°C)
160
150
140
130
120
110
100
90
0
1
2
3
4
5
6
7
8
9
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
1000
8GBU Series
Instantaneous Forward Current (A)
100
180˚
(Rect)
180˚
(Sine)
10
T
J
= 25˚C
T
J
= 150˚C
1
8GBU Series
0.1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
Average Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
220
200
180
160
140
120
100
80
60
1
180˚
(Sine)
180˚
(Rect)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
8GBU Series
T = 150˚C
J
8GBU Series
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
4
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8GBU Series
Bulletin I2719 rev. F 11/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/02
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