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MMBT2131T3

Description
General Purpose Transistors
CategoryDiscrete semiconductor    The transistor   
File Size88KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MMBT2131T3 Overview

General Purpose Transistors

MMBT2131T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSC-59
package instructionCASE 318F-02, SC-59, 6 PIN
Contacts6
Manufacturer packaging codeCASE 318F-02
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)150
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.342 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2131T1/D
Product Preview
General Purpose Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
Operating and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
R
q
JA
PD
PD
R
q
JA
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
MMBT2131T1
MMBT2131T3
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
6
5
4
1
2
3
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
PNP
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100
m
Adc)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100
m
Adc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
V(BR)CBO
40
V(BR)CEO
30
V(BR)EBO
5.0
ICBO
IEBO
10
1.0
10
Vdc
Vdc
Vdc
m
Adc
m
Adc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
hFE
150
VCE(sat)
VCE(sat)
VBE(sat)
VBE(on)
1.0
1.1
Vdc
0.4
Vdc
0.25
Vdc
Vdc
Vdc
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Motorola Bipolar
©
Motorola, Inc. 1998
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