2N4150S
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N4150SJ)
•
JANTX level (2N4150SJX)
•
JANTXV level (2N4150SJV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power, High voltage
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 3101
Reference document:
MIL-PRF-19500/394
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 100°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
70
100
10
10
1
5.7
5
50
.175
.020
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
R
θJA
R
θJC
T
J
T
STG
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4150S
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 10 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
T
A
= -55°C
I
C
= 5 A, I
B
= 500 mA
I
C
= 10 A, I
B
= 1 A
I
C
= 5 A, I
B
= 500 mA
I
C
= 10 A, I
B
= 1 A
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CEO
I
CEX1
I
CEX2
I
EBO1
I
EBO2
Test Conditions
I
C
= 100 mA
V
CB
= 100 Volts
V
CB
= 80 Volts,
V
CE
= 60 Volts
V
CE
= 60Volts, V
EB
= .5Volts
V
CE
= 60Volts, V
EB
= .5Volts,
T
A
= 150°C
V
EB
= 7 Volts
V
EB
= 5 Volts
Min
70
10
100
10
10
100
10
100
Typ
Max
Units
Volts
µA
nA
µA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
50
40
10
20
Typ
Max
200
120
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
1.5
2.5
0.6
2.5
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
t
d
t
r
t
s
t
f
Test Conditions
V
CE
= 10 Volts, I
C
= 200 mA,
f = 10 MHz
V
CE
= 5 Volts, I
C
= 50 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
1.5
40
Typ
Max
7.5
160
350
Units
pF
I
C
= 5 A, I
B
= 500 mA,
I
C
= 5 A, I
B1
= -I
B2
= 500 mA
50
500
1.5
500
ns
µs
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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