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ML776H10

Description
InGaAsP-MQW HIGH POWER LASER DIODES
CategoryLED optoelectronic/LED    photoelectric   
File Size80KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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ML776H10 Overview

InGaAsP-MQW HIGH POWER LASER DIODES

ML776H10 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature50 °C
Minimum operating temperature
Optoelectronic device typesLASER DIODE
peak wavelength1310 nm
shapeROUND
size2 mm
surface mountNO
Maximum threshold current50 mA

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