HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
• Flat-lead 4-pin thin-type super minimold (M04) package
NF = 0.4 dB TYP., G
a
= 17.5 dB TYP. @ f = 2 GHz, V
DS
= 2 V, I
D
= 10 mA
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3509M04
NE3509M04-T2
Order Number
NE3509M04-A
NE3509M04-T2-A
Package
-O
Quantity
Marking
V80
50 pcs (Non reel)
3 kpcs/reel
15 kpcs/reel
Ratings
4.0
3.0
I
DSS
200
150
+150
65
to +150
Unit
V
V
mA
Flat-lead 4-pin thin-
(M04) (Pb-Free)
type super minimold
SE
Symbol
V
DS
V
GS
I
D
I
G
P
tot
Note
<R>
NE3509M04-T2B
NE3509M04-T2B-A
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04-A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
PH
A
Total Power Dissipation
Channel Temperature
Storage Temperature
T
ch
T
stg
Document No. PG10608EJ02V0DS (2nd edition)
Date Published October 2008 NS
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
UT
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
A
mW
C
C
NE3509M04
RECOMMENDED OPERATING CONDITIONS (T
A
= +25C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Gain 1 dB Compression
Output Power
Symbol
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
P
O (1 dB)
V
GS
=
3
V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 50
A
V
DS
= 2 V, I
D
= 10 mA
Test Conditions
MIN.
-O
16
V
DS
= 2 V, I
D
= 10 mA, f = 2 GHz
V
DS
= 2 V, I
D
= 10 mA (Non-RF),
f = 2 GHz
PH
A
2
Data Sheet PG10608EJ02V0DS
SE
UT
TYP.
0.5
45
MAX.
10
60
Unit
A
30
mA
V
0.25
80
0.5
0.75
mS
dB
dB
0.4
0.7
17.5
11
dBm
NE3509M04
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
PH
A
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10608EJ02V0DS
SE
3
-O
UT
Embedded System
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