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FX50SMJ-03

Description
Pch POWER MOSFET HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size65KB,4 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric View All

FX50SMJ-03 Overview

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

FX50SMJ-03 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPOWEREX
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0345 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
FX50SMJ-03
OUTLINE DRAWING
15.9 max
Dimensions in mm
4.5
1.5
4
2
2
4
20.0
φ
3.2
5.0
19.5 min
4.4
G
0.6
2.8
1.0
1
2
3
5.45
5.45
4
3
4V DRIVE
V
DSS
............................................................... –30V
r
DS (ON) (MAX)
................................................ 35mΩ
I
D
.................................................................... –50A
Integrated Fast Recovery Diode (TYP.) ...........55ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1
1
2
3
4
2 4
GATE
DRAIN
SOURCE
DRAIN
TO-3P
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–30
±20
–50
–200
–50
–50
–200
70
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
Avalanche drain current (Pulsed) L = 10µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
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