(TC = 25°C unless otherwise noted; both directions)
Characteristic
Breakover Current
Repetitive Peak Off-State Current
(60 Hz Sine Wave, VD = 90 V)
Forward “On” Voltage
(ITM = 1 A Peak)
Dynamic Holding Current
Switching Resistance
Maximum Rate of Change of On-State Current
Symbol
I(BO)
IDRM
VTM
IH
RS
di/dt
Min
—
—
—
—
0.1
—
Typ
—
—
1.1
—
—
50
Max
200
10
1.5
100
—
—
Unit
µA
µA
Volts
mA
kΩ
A/µs
CURRENT DERATING
T C MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
TA MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (
°
C)
120
α
110
α
= Conduction Angle
Tj Rated = 125°C
140
120
100
80
60
40
20
0
0
0.2
α
= 180°
α
α
= Conduction Angle
Tj Rated = 125°C
100
90
80
0
0.2
0.4
α
= 180°
0.6 0.8
1.0
1.2
1.4 1.6 1.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
2.0
0.6 0.8
1.0 1.2
1.4
1.6
1.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.4
2.0
Figure 1. Maximum Case Temperature
PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 2. Maximum Ambient Temperature
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.0
0.8
0.6
0.4
0.3
0.2
25°C
125°C
1.25
1.0
α
0.75
α
= Conduction Angle
Tj Rated = 125°C
α
= 180°
0.50
0.25
0
0
0.4
0.6
0.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.2
1.0
0.1
0.8
0.9
1.0
1.1
1.2
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1.3
Figure 3. Typical Forward Voltage
Figure 4. Power Dissipation
2
Motorola Thyristor Device Data
MKP3V110 MKP3V120 MKP3V130
THERMAL CHARACTERISTICS
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.2
Z
θJL
(t) = R
θJL •
r(t)
∆T
JL = Ppk R
θJL
[r(t)]
where:
LEAD LENGTH = 1/4″
tp
TIME
The temperature of the lead should be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is nor-
mally large enough so that it will not significantly respond to
heat surges generated in the diode as a result of pulsed op-
eration once steady-state conditions are achieved. Using the
measured value of TL, the junction temperature may be de-
termined by:
∆T
JL = the increase in junction temperature above the lead
temperature
r(t) = normalized value of transient thermal resistance at time,
t from this figure. For example,
r(tp) = normalized value of
transient resistance at time tp.
TJ = TL +
∆T
JL
0.5
1.0
2.0
5.0
10
20
50
100
t, TIME (ms)
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
100
I(BO) , BREAKOVER CURRENT (
µ
A)
90
80
70
60
50
40
30
20
10
0
–60
I H , HOLDING CURRENT (mA)
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
120
140
250
225
200
175
150
125
100
75
50
25
0
–60
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
140
Figure 6. Breakover Current
Figure 7. Holding Current
ITM
IH
VTM
Slope = RS
IS
IDRM
VS
I(BO)
V(BO)
VDRM
RS
+
(
(
IS
*
I(BO)
)
V (BO)
*
VS
)
Figure 8. V-1 Characteristics
Motorola Thyristor Device Data
3
MKP3V110 MKP3V120 MKP3V130
PACKAGE DIMENSIONS
B
D
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
DIM
A
B
D
K
INCHES
MIN
MAX
0.370
0.380
0.190
0.210
0.048
0.052
1.000
–––
MILLIMETERS
MIN
MAX
9.40
9.65
4.83
5.33
1.22
1.32
25.40
–––
K
A
K
2
CASE 267–03
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