(TC = 25°C unless otherwise noted; both directions)
Characteristic
Breakover Current
Repetitive Peak Off-State Current
(60 Hz Sine Wave, VD = 90 V)
Forward “On” Voltage
(ITM = 1 A Peak)
Dynamic Holding Current
Switching Resistance
Maximum Rate of Change of On-State Current
Symbol
I(BO)
IDRM
VTM
IH
RS
di/dt
Min
—
—
—
—
0.1
—
Typ
—
—
1.1
—
—
50
Max
200
10
1.5
100
—
—
Unit
µA
µA
Volts
mA
kΩ
A/µs
CURRENT DERATING
T C MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
TA MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (
°
C)
120
α
110
α
= Conduction Angle
Tj Rated = 125°C
140
120
100
80
60
40
20
0
0
0.2
α
= 180°
α
α
= Conduction Angle
Tj Rated = 125°C
100
90
80
0
0.2
0.4
α
= 180°
0.6 0.8
1.0
1.2
1.4 1.6 1.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
2.0
0.6 0.8
1.0 1.2
1.4
1.6
1.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.4
2.0
Figure 1. Maximum Case Temperature
PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 2. Maximum Ambient Temperature
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.0
0.8
0.6
0.4
0.3
0.2
25°C
125°C
1.25
1.0
α
0.75
α
= Conduction Angle
Tj Rated = 125°C
α
= 180°
0.50
0.25
0
0
0.4
0.6
0.8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0.2
1.0
0.1
0.8
0.9
1.0
1.1
1.2
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
1.3
Figure 3. Typical Forward Voltage
Figure 4. Power Dissipation
2
Motorola Thyristor Device Data
MKP3V110 MKP3V120 MKP3V130
THERMAL CHARACTERISTICS
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.2
Z
θJL
(t) = R
θJL •
r(t)
∆T
JL = Ppk R
θJL
[r(t)]
where:
LEAD LENGTH = 1/4″
tp
TIME
The temperature of the lead should be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is nor-
mally large enough so that it will not significantly respond to
heat surges generated in the diode as a result of pulsed op-
eration once steady-state conditions are achieved. Using the
measured value of TL, the junction temperature may be de-
termined by:
∆T
JL = the increase in junction temperature above the lead
temperature
r(t) = normalized value of transient thermal resistance at time,
t from this figure. For example,
r(tp) = normalized value of
transient resistance at time tp.
TJ = TL +
∆T
JL
0.5
1.0
2.0
5.0
10
20
50
100
t, TIME (ms)
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
100
I(BO) , BREAKOVER CURRENT (
µ
A)
90
80
70
60
50
40
30
20
10
0
–60
I H , HOLDING CURRENT (mA)
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
120
140
250
225
200
175
150
125
100
75
50
25
0
–60
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
140
Figure 6. Breakover Current
Figure 7. Holding Current
ITM
IH
VTM
Slope = RS
IS
IDRM
VS
I(BO)
V(BO)
VDRM
RS
+
(
(
IS
*
I(BO)
)
V (BO)
*
VS
)
Figure 8. V-1 Characteristics
Motorola Thyristor Device Data
3
MKP3V110 MKP3V120 MKP3V130
PACKAGE DIMENSIONS
B
D
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
DIM
A
B
D
K
INCHES
MIN
MAX
0.370
0.380
0.190
0.210
0.048
0.052
1.000
–––
MILLIMETERS
MIN
MAX
9.40
9.65
4.83
5.33
1.22
1.32
25.40
–––
K
A
K
2
CASE 267–03
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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