TQP3M9009
Applications
High Linearity LNA Gain Block
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
General Purpose Wireless
3-pin SOT-89 Package
Product Features
50-4000 MHz
21.8 dB Gain @ 1.9 GHz
+39.5 dBm Output IP3
1.3 dB Noise Figure @ 1.9 GHz
50 Ohm Cascadable Gain Block
Unconditionally stable
High input power capability
+5V Single Supply, 125 mA Current
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
General Description
The TQP3M9009 is a cascadable, high linearity gain block
amplifier in a low-cost surface-mount package. At 1.9
GHz, the amplifier is targeted to provide 21.8 dB gain,
+39.5 dBm OIP3, and 1.3 dB Noise Figure while only
drawing 125 mA current. The device is housed in a
leadfree/green/RoHS-compliant industry-standard SOT-89
package using a NiPdAu plating to eliminate the
possibility of tin whiskering.
The TQP3M9009 has the benefit of having high gain
across a broad range of frequencies while also providing
very low noise. This allows the device to be used in both
receiver and transmitter chains for high performance
systems. The amplifier is internally matched using a high
performance E-pHEMT process and only requires an
external RF choke and blocking/bypass capacitors for
operation from a single +5V supply. The internal active
bias circuit also enables stable operation over bias and
temperature variations.
The TQP3M9009 covers the 0.05-4 GHz frequency band
and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Pin Configuration
Pin #
1
3
2, 4
Symbol
RF Input
RF Output / Vcc
Ground
Ordering Information
Part No.
TQP3M9009
TQP3M9009-PCB_IF
TQP3M9009-PCB_RF
Description
High Linearity LNA Gain Block
TQP3M9009 EVB 0.05-0.5 GHz
TQP3M9009 EVB 0.5-4 GHz
Standard T/R size = 1000 pieces on a 7” reel.
Advanced Data Sheet: Rev B 03/29/10
© 2009 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without noticee
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TQP3M9009
Specifications
High Linearity LNA Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,CW,50
Ω,
T = 25ºC
Device Voltage,V
dd
Reverse Device Voltage
Thermal Resistance (junction to case)
Junction Temperature, T
J
For 10
6
hours MTTF
Recommended Operating Conditions
o
Rating
Parameter
V
dd
T(case)
Min
+4.75
-40
Typ
+5
Max Units
+5.25
85
V
o
C
-65 to +150 C
+23 dBm
+7 V
-0.3 V
34
o
C/W
190
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50
Ω
system.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Vdd
Current, Idd
Conditions
Min
50
Typical
1900
21.8
13
14
+22
+39.5
1.3
+5
125
Max
4000
See Note 1.
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Notes
1. OIP3 measured with two tones at an output power of +3 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
Advanced Data Sheet: Rev B 03/29/10
© 2009 TriQuint Semiconductor, Inc.
-
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Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
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TQP3M9009
High Linearity LNA Gain Block
Application Circuit Configuration
+5Vdd
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. B1 (0
Ω
jumper) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
Bill of Material
Reference Designation
Q1
C2, C6
C1
L2
L1, D1, C3, C4
B1
Frequency (MHz)
TQP3M9009-PCB_IF
TQP3M9009-PCB_RF
50 - 500
500 - 4000
TQP3M9009
1000 pF
0.01 uF
330 nH
Do Not Place
0
Ω
100 pF
0.01 uF
68 nH
Notes:
1. Performances can be optimized at frequency of interest by using recommended component values shown in the table below.
Reference
Designation
C2, C6
L2
500
100 pF
82 nH
2000
22 pF
22 nH
Frequency (MHz)
2500
22 pF
18 nH
3500
22 pF
15 nH
Advanced Data Sheet: Rev B 03/29/10
© 2009 TriQuint Semiconductor, Inc.
-
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Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
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TQP3M9009
High Linearity LNA Gain Block
Typical Performance 500-4000 MHz
Test conditions unless otherwise noted: +25ºC, +5V, 125 mA, 50
Ω
system. The data shown below is measured on TQP3M9009-PCB_RF.
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3 [1]
Noise Figure [2]
MHz
dB
dB
dB
dBm
dBm
dB
500
25.5
11.5
10.8
+22.5
+41.4
0.9
900
24.7
12
13
+21.8
+40.5
0.9
1900
21.8
13
14
+22
+39.5
1.3
2700
20
13
10
+21.6
+39
1.7
3500
18.9
8
10
+21.8
+37.9
2.1
4000
17.9
6
11.3
+20.7
+35.8
2.4
Notes:
1.
OIP3 measured with two tones at an output power of +3 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
2.
Noise figure data shown in the table above is measured on evaluation board which includes board losses of around 0.1 dB @ 2 GHz.
RF Performance Plots
Gain vs. Frequency over Temp
28
-40 C
-20 C
+25 C
+85 C
S11 vs. Frequency over Temp
0
+85 C
+25 C
-20
⁰C
-40 C
-5
24
Gain (dB)
S11 (dB)
-10
20
-15
16
500
1000
1500
2000
2500
3000
3500
4000
-20
500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
Frequency (MHz)
S22 vs. Frequency over Temp
0
-40 C
-20
⁰C
+25 C
+85 C
Noise Figure vs. Frequency over Temp
4
+85 C
-5
3
+25 C
-40 C
S22 (dB)
-10
NF (dB)
500
1000
1500
2000
2500
3000
3500
4000
2
-15
1
-20
0
500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
Frequency (MHz)
Advanced Data Sheet: Rev B 03/29/10
© 2009 TriQuint Semiconductor, Inc.
-
4 of 10
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Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
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TQP3M9009
High Linearity LNA Gain Block
RF Performance Plots
OIP3 vs. Pout / tone over Temp
Freq = 1900 MHz, 1 MHz Spacing
45
45
OIP3 vs. Frequency over Temp
1 MHz Spacing, 3 dBm/tone
40
40
OIP3 (dBm)
35
OIP3 (dBm)
35
+25 C
+85 C
-40 C
30
+25 C
+85 C
-40 C
30
25
0
2
4
6
8
Pout / tone (dBm)
10
12
25
500
1000
1500
2000
2500
3000
Pout / tone (dBm)
3500
4000
OIP3 vs. Vdd
45
F=1900 MHz, 1 MHz Spacing, T=+25⁰C, 3dBm / tone
24
22
40
P1dB vs. Frequency over Temp
OIP3 (dBm)
35
P1dB (dB)
20
18
16
14
-40 C
+25 C
+85 C
30
25
3.25
3.5
3.75
4
4.25
4.5
Vdd (V)
4.75
5
5.25
500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
Idd vs. Vdd
130
125
T=25⁰C, CW Signal
130
125
Idd vs. Temperature
CW Signal
Idd (mA)
120
115
110
105
3.25
Idd (mA)
3.5
3.75
4
4.25
Vdd (V)
4.5
4.75
5
5.25
120
115
110
105
-40
-15
10
35
Temperature (⁰C)
60
85
Advanced Data Sheet: Rev B 03/29/10
© 2009 TriQuint Semiconductor, Inc.
-
5 of 10
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
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