URSF05G49-3P datasheet, PDF - EEWORLD Datasheet

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URSF05G49-3P: DescriptionTOSHIBA THYRISTOR SILICON PLANAR TYPE; CategoryAnalog mixed-signal IC Trigger device; File Size241KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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URSF05G49-3P Overview

TOSHIBA THYRISTOR SILICON PLANAR TYPE

URSF05G49-3P Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknow
Configuration	SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE
Maximum DC gate trigger current	0.4 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	3 mA
JESD-30 code	R-PSSO-F3
Maximum leakage current	0.01 mA
On-state non-repetitive peak current	9 A
Number of components	1
Number of terminals	3
Maximum on-state current	500 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Maximum repetitive peak off-state leakage current	10 µA
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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URSF05G49-1P,URSF05G49-3P,URSF05G49-5P

TOSHIBA THYRISTOR SILICON PLANAR TYPE

URSF05G49-1P,URSF05G49-3P,URSF05G49-5P

LOW POWER SWITCHING AND CONTROL

APPLICATIONS

Repetitive Peak Off−State Voltage : V

DRM

= 400V

Repetitive Peak Reverse Voltage : V

RRM

= 400V

Average On−State Current

: I

T (AV)

= 500mA

Reduce a Quantity of Parts and Manufacturing

Process Because of Built−in RGK : R

1kΩ,

2.7kΩ, 5.1kΩ (Typ.)

Unit: mm

MAXIMUM RATINGS

CHARACTERISTIC

Repetitive Peak Off−State Voltage

and Repetitive Peak Reverse Voltage

Non−Repetitive Peak Reverse

Voltage (Non−Repetitive<5ms,

Tj = 0~125°C)

Average On−State Current

(Half Sine Waveform)

R.M.S On−State Current

Peak One Cycle Surge On−State

Current (Non−Repetitive)

I t Limit Value

Critical Rate of Rise of On−State

Current

(Note 1)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Reverse Gate Voltage

Peak Forward Gate Current

Junction Temperature

Storage Temperature Range

SYMBOL

DRM

RRM

RSM

T (AV)

T (RMS)

TSM

I t

di / dt

G(AV)

FGM

RGM

stg

RATINGS

400

UNIT

500

800

9 (50Hz)

10 (60Hz)

0.4

0.1

0.01

3.5

−5

125

−40~125

A s

A / µs

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.2 g

―

13−5B1A

EQUIVALENT CIRCUIT

NOTE 1: di / dt Test condition

= 5mA, t

=10µs,

≤250ns

2001-07-11

URSF05G49-3P Related Products

	URSF05G49-3P	URSF05G49-1P	URSF05G49-5P
Description	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE	TOSHIBA THYRISTOR SILICON PLANAR TYPE
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
Configuration	SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE	SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE	SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE
Maximum DC gate trigger current	0.4 mA	1 mA	0.25 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V	0.8 V
Maximum holding current	3 mA	6 mA	2 mA
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Maximum leakage current	0.01 mA	0.01 mA	0.01 mA
On-state non-repetitive peak current	9 A	9 A	9 A
Number of components	1	1	1
Number of terminals	3	3	3
Maximum on-state current	500 A	500 A	500 A
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	0.8 A	0.8 A	0.8 A
Maximum repetitive peak off-state leakage current	10 µA	10 µA	10 µA
Off-state repetitive peak voltage	400 V	400 V	400 V
Repeated peak reverse voltage	400 V	400 V	400 V
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR

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