MJE800 datasheet, PDF - EEWORLD Datasheet

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MJE800: Description4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; CategoryDiscrete semiconductor The transistor; File Size145KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MJE800 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

MJE800 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-225AA
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	40 W
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
VCEsat-Max	3 V

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•

High DC Current Gain —

hFE = 2000 (Typ) @ IC = 2.0 Adc

•

Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage

Multiplication

•

Choice of Packages —

MJE700 and MJE800 series

T0220AB, MJE700T and MJE800T

. . . designed for general–purpose amplifier and low–speed switching applications.

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

Transistors

Complementary Silicon Power

Plastic Darlington

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

REV 3

PD, POWER DISSIPATION (WATTS)

Thermal Resistance, Junction to Case

CASE 77

TO–220

Operating and Storage Junction

Temperature Range

Total Power Dissipation @ TC = 25

Derate above 25

Base Current

Collector Current

Emitter–Base Voltage

Collector–Base Voltage

Collector–Emitter Voltage

Characteristic

Rating

TO–126

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

TO–220AB

Symbol

TJ, Tstg

VCEO

VCB

VEB

Symbol

θJC

100

MJE700,T

MJE800,T

CASE 77

0.32

– 55 to + 150

125

0.1

4.0

5.0

3.13

2.50

Max

MJE702

MJE703

MJE802

MJE803

TO–220

0.40

150

Watts

C/W

Unit

Adc

Vdc

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

40 WATT

50 WATT

MJE800,T

MJE700,T

MJE803

MJE802

MJE703

MJE702

CASE 77–08

TO–225AA TYPE

MJE700 – 703

MJE800 – 803

CASE 221A–06

TO–220AB

MJE700T

MJE800T

Order this document

by MJE700/D

NPN

PNP

MJE800 Related Products

	MJE800	MJE802	MJE803	MJE703	MJE700
Description	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	60 V	80 V	80 V	80 V	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	100	100	100	100	100
JEDEC-95 code	TO-225AA	TO-225AA	TO-225AA	TO-225AA	TO-225AA
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	PNP	PNP
Maximum power consumption environment	40 W	40 W	40 W	40 W	40 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1 MHz	1 MHz	1 MHz	1 MHz	1 MHz
VCEsat-Max	3 V	3 V	3 V	3 V	3 V
Maximum power dissipation(Abs)	40 W	-	-	40 W	40 W

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