BLF368
VHF push-pull power MOS transistor
Rev. 5 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
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Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead SOT262A1 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT262A1
PIN
1
2
3
4
5
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source
ndbook, halfpage
BLF368
PIN CONFIGURATION
1
2
d2
g2
g1
s
d1
MBB157
5
3
Top view
5
4
MSB008
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-AB
f
(MHz)
225
V
DS
(V)
32
P
L
(W)
300
G
p
(dB)
>12
typ. 13.5
Note
1. Assuming a third order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% synchronized
input/25% synchronized output compression in television service (negative modulation, CCIR system).
∆G
p
(dB)
(note
1)
>1
typ. 0.4
η
D
(%)
>55
typ. 62
2003 Sep 26
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−65
−
MIN.
BLF368
MAX.
UNIT
Per transistor section
unless otherwise specified
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
±20
25
500
+150
200
V
V
A
W
°C
°C
total power dissipation T
mb
≤
25
°C
total device; both sections equally loaded
−
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
CONDITIONS
VALUE
0.35
0.15
UNIT
K/W
K/W
thermal resistance from junction to mounting base total device; both sections
equally loaded
thermal resistance from mounting base to
heatsink
total device; both sections
equally loaded
10
2
handbook, halfpage
ID
(A)
(1)
(2)
MRA933
handbook, halfpage
500
MGE616
Ptot
(W)
400
(2)
(1)
300
10
200
100
1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (°C)
160
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
2003 Sep 26
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETERS
CONDITIONS
MIN.
TYP.
−
−
−
−
−
7.5
−
0.1
37
495
340
40
5.4
BLF368
MAX.
−
5
1
4.5
100
−
1.1
0.15
−
−
−
−
−
UNIT
Per transistor section
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
g
fs1
/g
fs2
R
DSon
I
DSX
C
is
C
os
C
rs
C
d-f
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
both transistor sections
forward transconductance
forward transconductance ratio of
both transistor sections
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
V
GS
= 0; I
D
= 100 mA
V
GS
= 0; V
DS
= 32 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 100 mA; V
DS
= 10 V
I
D
= 100 mA; V
DS
= 10 V
I
D
= 8 A; V
DS
= 10 V
I
D
= 8 A; V
DS
= 10 V
I
D
= 8 A; V
DS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
V
GS
= 0; V
DS
= 32 V; f = 1 MHz
65
−
−
2
−
5
0.9
−
−
−
−
−
−
V
mA
µA
V
mV
S
Ω
A
pF
pF
pF
pF
V
GS
group indicator
LIMITS
(V)
MIN.
A
B
C
D
E
F
G
H
J
K
L
M
N
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
O
P
Q
R
S
T
U
V
W
X
Y
Z
LIMITS
(V)
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
GROUP
GROUP
2003 Sep 26
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF368
handbook, halfpage
0
MGP229
MGP230
handbook, halfpage
60
T.C.
(mV/K)
−1
ID
(A)
40
−2
−3
20
−4
−5
10
−1
1
ID (A)
10
0
0
5
10
15
VGS (V)
20
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
MGP231
MGP234
200
handbook, halfpage
RDSon
(mΩ)
150
handbook, halfpage
1500
C
(pF)
1000
100
500
Cis
Cos
50
0
50
100
Tj (°C)
150
0
0
10
20
30
VDS (V)
40
V
GS
= 10 V; I
D
= 8 A.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
2003 Sep 26
5
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