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MJD6039T4

Description
SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
CategoryDiscrete semiconductor    The transistor   
File Size154KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS

MJD6039T4 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-based maximum capacity100 pF
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)500
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment20 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)25 MHz
Maximum off time (toff)2900 ns
VCEsat-Max2.5 V
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Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, convertors, and power amplifiers.
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
OFF CHARACTERISTICS
Collector–Cutoff Current
(VCE = 40 Vdc, IB = 0)
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
Thermal Resistance, Junction to Ambient (1)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Power Dissipation (1) @ TA = 25
_
C
Derate above 25
_
C
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current — Continuous
Peak
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
* Pulse Test: Pulse Width
300
µs,
Duty Cycle
2%.
(continued)
DPAK For Surface Mount Applications
Complementary Darlington
Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 2
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Available on 16 mm Tape and Reel for Automatic Handling (“T4” Suffix)
Surface Mount Replacements for 2N6034– 2N6039 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc
Complementary Pairs Simplifies Designs
Characteristic
Characteristic
Rating
v
v
VCEO(sus)
Symbol
Symbol
Symbol
TJ, Tstg
VCEO
R
θJC
ICEO
R
θJA
VCB
VEB
PD
PD
IC
IB
– 65 to + 150
Min
80
MJD6036
MJD6039
1.75
0.014
71.4
6.25
Max
20
0.16
100
80
80
4
8
5
Max
10
mAdc
Watts
W/
_
C
Watts
W/
_
C
_
C/W
_
C/W
µAdc
Unit
Unit
Unit
Vdc
Adc
Vdc
Vdc
Vdc
_
C
SILICON
POWER TRANSISTORS
4 AMPERES
80 VOLTS
20 WATTS
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
MJD6036
PNP
MJD6039
CASE 369A–13
CASE 369–07
Order this document
by MJD6036/D
NPN
inches
mm
1
0.243
6.172
0.063
1.6
0.118
3.0
0.07
1.8
0.165
4.191
0.190
4.826

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Description SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A 4 A
Collector-based maximum capacity 100 pF 100 pF 200 pF 200 pF 200 pF 100 pF
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V 80 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 500 500 500 500 500 500
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1 1 1 1
Number of terminals 2 2 3 2 2 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type PNP PNP NPN NPN NPN PNP
Maximum power consumption environment 20 W 20 W 20 W 20 W 20 W 20 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO YES YES NO
Terminal form GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 25 MHz 25 MHz 25 MHz 25 MHz 25 MHz 25 MHz
Maximum off time (toff) 2900 ns 2900 ns 2900 ns 2900 ns 2900 ns 2900 ns
VCEsat-Max 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 -
JESD-609 code - e0 e0 e0 - e0
Maximum power dissipation(Abs) - 20 W 20 W 20 W - 20 W
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
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