BDX53/A/B/C — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Symbol
T
C
= 25°C unless otherwise noted
Parameter
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
Typ.
Max.
Units
V
V
V
V
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
I
CBO
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 3A, I
B
= 12mA
I
F
= 3A
I
F
= 8A
1.8
2.5
750
200
200
200
200
500
500
500
500
2
2
2.5
2.5
μA
μA
μA
μA
μA
μA
μA
μA
mA
V
V
V
V
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
F
* Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed
© 2011 Fairchild Semiconductor Corporation
BDX53/A/B/C Rev. B0
2
www.fairchildsemi.com
BDX53/A/B/C — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100000
3.4
V
BE
(sat)[V], SATURATION VOLTAGE
V
CE
= 3V
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
C
= 250I
B
h
FE
, DC CURRENT GAIN
10000
1000
100
0.1
1
10
0.8
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
3.2
3.0
V
CE
(sat)[V], SATURATION VOLTAGE
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
1
I
C
= 250I
B
2.8
V
F
(sat)[V], FORWARD VOLTAGE
10
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
F
[A], FORWARD CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Damper Diode Forward Voltage
100
80
70
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
1000
I
C
Max. (Pulsed)
60
50
40
30
20
10
0
0
25
50
o
10
10
us
1m
I
C
Max. (Continuous)
s
100us
C
D
1
BDX53
BDX53A
BDX53B
BDX53C
0.1
1
10
100
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2011 Fairchild Semiconductor Corporation
BDX53/A/B/C Rev. B0
3
www.fairchildsemi.com
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Rev. I53
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