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IPB70N04S307

Description
MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size183KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPB70N04S307 Overview

MOSFET

IPB70N04S307 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance6.2 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
Fall Time7 ns
Height4.4 mm
Length10 mm
Pd - Power Dissipation79 W
Rise Time8 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17 ns
Typical Turn-On Delay Time13 ns
Width9.25 mm
Unit Weight0.079014 oz
IPB70N04S3-07
IPI70N04S3-07, IPP70N04S3-07
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
6.2
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB70N04S3-07
IPI70N04S3-07
IPP70N04S3-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0407
3N0407
3N0407
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=50 A
Value
Unit
A
80
58
280
145
±20
79
-55 ... +175
55/175/56
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03

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