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IPB70N04S3-07

Description
MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T
CategoryDiscrete semiconductor    The transistor   
File Size183KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPB70N04S3-07 Overview

MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T

IPB70N04S3-07 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, TO-263, 3 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)145 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)70 A
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.0071 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)79 W
Maximum pulsed drain current (IDM)280 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
IPB70N04S3-07
IPI70N04S3-07, IPP70N04S3-07
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
6.2
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB70N04S3-07
IPI70N04S3-07
IPP70N04S3-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0407
3N0407
3N0407
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=50 A
Value
Unit
A
80
58
280
145
±20
79
-55 ... +175
55/175/56
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03

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