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MJ11012

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size141KB,3 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
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POWER TRANSISTOR

MJ11012 Parametric

Parameter NameAttribute value
MakerMOSPEC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)30 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)200
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
surface mountNO

MJ11012 Related Products

MJ11012 MJ11016 MJ11015 MJ11014 MJ11013 MJ11011
Description POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR
Maker MOSPEC MOSPEC MOSPEC MOSPEC MOSPEC -
Reach Compliance Code unknow unknow unknow unknow unknow -
Maximum collector current (IC) 30 A 30 A 30 A 30 A 30 A -
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON -
Minimum DC current gain (hFE) 200 200 200 200 200 -
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C -
Polarity/channel type NPN NPN PNP NPN PNP -
Maximum power dissipation(Abs) 200 W 200 W 200 W 200 W 200 W -
surface mount NO NO NO NO NO -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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