Low Voltage, Dual DPDT and Quad SPDT Analog Switches
DESCRIPTION
The DG2018 and DG2019 are low voltage, single supply
analog switches. The DG2018 is a dual double-pole/double-
throw (DPDT) with two control inputs that each controls a
pair of single-pole/double-throw (SPDT). The DG2019 uses
one control pin to operate four independent SPDT switches.
When operated on a + 3 V supply, the DG2018’s control pins
are compatible with 1.8 V digital logic. The DG2019 has an
available feature of a V
L
pin that allows a 1.0 V threshold for
the control pin when V
L
is powered with 1.5 V.
Built on Vishay Siliconix’s low voltage submicron CMOS
process, the DG2018 and DG2019 are ideal for high
performance switching of analog signals; providing low on-
resistance (6
Ω
at + 2.7 V), fast speed (T
on
, T
off
at 42 ns and
16 ns), and a bandwidth that exceeds 180 MHz.
The DG2018 and DG2019 were designed to offer solutions
that extend beyond audio/video functions, to providing the
performance required for today’s demanding mixed-signal
switching in portable applications.
An epitaxial layer prevents latch-up. Brake-before-make is
guaranteed for all SPDT’s. All switches conduct equally well
in both directions when on, and blocks up to the power
supply level when off.
FEATURES
• Low voltage operation (1.8 V to 5.5 V)
• Low on resistance
- R
DS(on)
: 6
Ω
at 2.7 V
• Low voltage logic compatible
- DG2019: V
INH
= 1 V
• High bandwidth: 180 MHz
•
QFN-16 package
BENEFITS
•
•
•
•
•
•
Ideal for both analog and digital signal switching
Reduced power consumption
High accuracy
Reduced PCB space
Fast switching
Low leakage
APPLICATIONS
•
•
•
•
•
Cellular phones
Audio and video signal routing
PCMCIA cards
Battery operated systems
Portable instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2018DN
QFN-16 (3 X 3)
COM1 NO1
16
15
V+
14
NC4
13
TRUTH TABLE
IN1, IN2
Logic
0
1
COM4
NO4
IN3, IN4
NC3
NC1 and NC2
ON
OFF
NC3 and NC4
ON
OFF
NO1 and NO2
OFF
ON
NO3 and NO4
OFF
ON
NC1
IN1, IN2
NO2
COM2
1
2
3
4
12
11
10
9
IN3, IN4
Logic
0
1
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
QFN-16 (3 x 3 mm)
Part Number
DG2018DN
5
NC2
6
GND
7
8
NO3 COM3
Top View
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
www.vishay.com
1
DG2018, DG2019
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2019DN
QFN-16 (3 X 3)
COM1 NO1
16
15
V+
14
NC4
13
TRUTH TABLE
Logic
0
1
12
11
10
9
COM4
NO4
V
L
NC3
NC1, 2, 3 and 4
ON
OFF
NO1, 2, 3 and 4
OFF
ON
NC1
IN
NO2
COM2
1
2
3
4
ORDERING INFORMATION
Temp. Range
- 40 °C to 85 °C
Package
QFN-16 (3 x 3 mm)
Part Number
DG2019DN
5
NC2
6
GND
7
8
NO3 COM3
Top View
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
QFN-16 (3 x 3 mm)
c
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 100
- 65 to 150
850
Unit
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
www.vishay.com
2
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
DG2018, DG2019
Vishay Siliconix
SPECIFICATIONS
V+ = 3 V
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %,
(DG2018 Only) V
IN
= 0.5 or 1.4 V
e
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match Between
Channels
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
ΔR
ON
I
NO(off)
I
NC(off)
I
COM(off)
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Bandwidth
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
BW
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on
V
IN
= 0 or V+, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
V
NO
or V
NC
= 2.0 V, R
L
= 50
Ω,
C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω
V
NO
or V
NC
= 2.0 V, R
L
= 300
Ω,
C
L
= 35 pF
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
1
- 1.46
- 67
- 72
180
9
9
30
30
pF
pC
dB
MHz
42
16
55
65
25
35
ns
V
INH
V
INL
C
in
I
INL
or I
INH
DG2018
V
L
= 1.5 V
V
L
= 1.5 V
f = 1 MHz
V
IN
= 0 or V+
DG2019
DG2018
DG2019
Full
Full
Full
Full
Full
Full
-1
9
1
1.4
1.0
0.5
0.4
pF
µA
V
I
COM(on)
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V
I
NO
, I
NC
= 10 mA
V+ = 2.7 V
V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-1
- 10
-1
- 10
-1
10
0
6
V+
12
15
2
3
1
10
1
10
1
10
nA
Ω
V
Symbol
(DG2019 Only) V
L
= 1.5 V, V
IN
= 0.4 or 1.0 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
0.5
0.6
0.3
0.3
0.3
Switch Off Leakage Current
V+ = 3.3 V, V
NO
, V
NC
= 0.3 V/3 V
V
COM
= 3 V/0.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Document Number: 72342
S-82626-Rev. C, 03-Nov-08
www.vishay.com
3
DG2018, DG2019
Vishay Siliconix
SPECIFICATIONS
V+ = 5 V
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %,
(DG2018 Only) V
IN
= 0.8 or 1.8 V
e
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match Between Channels
Switch Off Leakage Current
f
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
ΔR
ON
I
NO(off)
I
NC(off)
I
COM(off)
Channel-On Leakage Current
f
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
Bandwidth
d
Source-Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V
IN
= 0 or V+
Full
1.8
0.01
5.5
1.0
V
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
BW
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on
V
IN
= 0 or V+, f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz
V
NO
or V
NC
= 3 V, R
L
= 50
Ω,
C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Ω
V
NO
or V
NC
= 3 V, R
L
= 300
Ω,
C
L
= 35 pF
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
1
- 2.46
- 67
- 72
180
7.5
7.5
30
30
pF
pC
dB
MHz
44
19
48
52
33
35
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
DG2018
V
L
= 1.5 V
V
L
= 1.5 V
DG2019
DG2018
DG2019
Full
Full
Full
Full
Full
Full
1
9
1
1.8
1.0
0.8
0.4
pF
µA
V
I
COM(on)
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
V+ = 4.5 V
V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-1
- 10
-1
- 10
-1
- 10
0
4
0.6
0.6
0.03
0.03
0.03
V+
8
10
1.2
1.2
1
10
1
10
1
10
nA
Ω
V
Symbol
(DG2019 Only) V
L
= 1.5 V, V
IN
= 0.4 or 1.0 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
V+ = 5.5 V, V
NO
, V
NC
= V
COM
= 1 V/4.5 V
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
京公网安备 11010802033920号
EEWORLD
